DEVICES AND DESIRES IN THE 2-4 MU-M REGION BASED ON ANTIMONY-CONTAINING III-V HETEROSTRUCTURES GROWN BY MOVPE

DEVICES AND DESIRES IN THE 2-4 MU-M REGION BASED ON ANTIMONY-CONTAINING III-V HETEROSTRUCTURES GROWN BY MOVPE

Manylion Llyfryddiaeth
Prif Awduron:	Aardvark, A, Allogho, G, Bougnot, G, David, J, Giani, A, Haywood, S, Hill, G, Klipstein, P, Mansoor, F, Mason, N, Nicholas, R, Pascaldelannoy, F, Pate, M, Ponnampalam, L, Walker, P
Fformat:	Conference item
Cyhoeddwyd:	1993

Eitemau Tebyg

GASB HETEROSTRUCTURES GROWN BY MOVPE
gan: Chidley, E, et al.
Cyhoeddwyd: (1988)

GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE
gan: Haywood, S, et al.
Cyhoeddwyd: (1991)

GROWTH OF GASB BY MOVPE
gan: Haywood, S, et al.
Cyhoeddwyd: (1988)

Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
gan: Maxim A. Ladugin, et al.
Cyhoeddwyd: (2019-06-01)

PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
gan: Warburton, R, et al.
Cyhoeddwyd: (1991)

Growth and application of group III - Antimonides by MOVPE
gan: Klipstein, P, et al.
Cyhoeddwyd: (1996)

GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment
gan: Allwood, D, et al.
Cyhoeddwyd: (2000)

ELECTROLUMINESCENCE OUT TO 2.1 MU-M OBSERVED IN GASB/IN(X)GA(1-X)SB QUANTUM-WELLS GROWN BY MOVPE
gan: Krier, A, et al.
Cyhoeddwyd: (1994)

ABSORPTION CHARACTERISTICS OF GASB/INAS AND INSB/INAS SLSS GROWN ON (111) GAAS BY MOVPE
gan: Lakrimi, M, et al.
Cyhoeddwyd: (1991)

MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM
gan: Mock, P, et al.
Cyhoeddwyd: (2000)

InP nanowires grown by SA-MOVPE
gan: Gao, Q, et al.
Cyhoeddwyd: (2012)

GASB INAS HETEROJUNCTIONS GROWN BY MOVPE - EFFECT OF GAS SWITCHING SEQUENCES ON INTERFACE QUALITY
gan: Lakrimi, M, et al.
Cyhoeddwyd: (1991)

Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor
gan: Booker, G, et al.
Cyhoeddwyd: (1997)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE
gan: Roslan, Sharizar, et al.
Cyhoeddwyd: (2006)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE /
gan: Zulkafli Othaman, author, et al.
Cyhoeddwyd: (2007)

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures
gan: V. Orejuela, et al.
Cyhoeddwyd: (2024-09-01)

MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL
gan: Mock, P, et al.
Cyhoeddwyd: (2001)

TED, TEM and AFM studies comparing atomic ordering in InAsySb1-y layers grown by MOVPE and MBE
gan: Seong, T, et al.
Cyhoeddwyd: (1997)

Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
gan: Norman, A, et al.
Cyhoeddwyd: (1997)

OPTIMIZATION OF THE GROWTH BY MOVPE OF STRAINED GASB/INAS DOUBLE HETEROJUNCTIONS AND SUPERLATTICES ON [111] GAAS SUBSTRATES
gan: Lakrimi, M, et al.
Cyhoeddwyd: (1992)

InGaN quantum dots grown by MOVPE via a droplet epitaxy route
gan: Rice, J, et al.
Cyhoeddwyd: (2004)

An atomic ordering based AlInP unicompositional quantum well grown by MOVPE
gan: Tang, Xiaohong, et al.
Cyhoeddwyd: (2013)

MOVPE-Grown Quantum Cascade Laser Structures Studied by Kelvin Probe Force Microscopy
gan: Konstantin Ladutenko, et al.
Cyhoeddwyd: (2020-02-01)

Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE
gan: Beata Ściana, et al.
Cyhoeddwyd: (2022-04-01)

N-polar AlN buffer growth by MOVPE for transistor applications
gan: Lemettinen, Jori, et al.
Cyhoeddwyd: (2019)

MOVPE InP based material for millimetsubmillimeter wave generation and amplificationer and
gan: Włodzimierz Strupiński, et al.
Cyhoeddwyd: (2002-03-01)

MOVPE Technology of Fe-Compensated In PLayers for the Quantum Cascade Laser Applications
gan: Mikołaj Badura
Cyhoeddwyd: (2020-06-01)

Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell
gan: Wojciech Dawidowski, et al.
Cyhoeddwyd: (2021-07-01)

Influence of substrate dopant type on the optical properties of GaInAs/InP multiquantum well structures grown by low pressure MOVPE
gan: Wood, A, et al.
Cyhoeddwyd: (1997)

Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates
gan: Soresi Stefano, et al.
Cyhoeddwyd: (2023-01-01)

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
gan: Lemettinen, Jori, et al.
Cyhoeddwyd: (2019)

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
gan: Kazimieras Badokas, et al.
Cyhoeddwyd: (2022-02-01)

CYCLOTRON-RESONANCE IN INAS/GASB HETEROSTRUCTURES
gan: Sundaram, G, et al.
Cyhoeddwyd: (1992)

The Photoionization Processes of Deep Trap Levels in n-GaN Films Grown by MOVPE Technique on Ammono-GaN Substrates
gan: Piotr Kruszewski, et al.
Cyhoeddwyd: (2024-09-01)

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal
gan: Oliver, R, et al.
Cyhoeddwyd: (2003)

Sulfidation of Zinc oxide by interaction with Antimony sulfide
gan: V.F. Zinchenko, et al.
Cyhoeddwyd: (2024-06-01)

GROWTH OF GAINAS/INP MULTI-QUANTUM-WELL PIN PHOTODIODE STRUCTURES BY ATMOSPHERIC-PRESSURE MOVPE
gan: Scott, M, et al.
Cyhoeddwyd: (1987)

Revisiting the Mechanistic Pathway of Gas-Phase Reactions in InN MOVPE Through DFT Calculations
gan: Xiaokun He, et al.
Cyhoeddwyd: (2025-02-01)

GAAS/GASB STRAINED-LAYER HETEROSTRUCTURES DEPOSITED BY METALORGANIC VAPOR-PHASE EPITAXY
gan: Chidley, E, et al.
Cyhoeddwyd: (1989)

Search for D+(s) to pi+ mu+ mu- and D+(s) to pi- mu+ mu+ decays
gan: collaboration, L, et al.
Cyhoeddwyd: (2013)