DEVICES AND DESIRES IN THE 2-4 MU-M REGION BASED ON ANTIMONY-CONTAINING III-V HETEROSTRUCTURES GROWN BY MOVPE

DEVICES AND DESIRES IN THE 2-4 MU-M REGION BASED ON ANTIMONY-CONTAINING III-V HETEROSTRUCTURES GROWN BY MOVPE

ग्रंथसूची विवरण
मुख्य लेखकों:	Aardvark, A, Allogho, G, Bougnot, G, David, J, Giani, A, Haywood, S, Hill, G, Klipstein, P, Mansoor, F, Mason, N, Nicholas, R, Pascaldelannoy, F, Pate, M, Ponnampalam, L, Walker, P
स्वरूप:	Conference item
प्रकाशित:	1993

समान संसाधन

GASB HETEROSTRUCTURES GROWN BY MOVPE
द्वारा: Chidley, E, और अन्य
प्रकाशित: (1988)

GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE
द्वारा: Haywood, S, और अन्य
प्रकाशित: (1991)

GROWTH OF GASB BY MOVPE
द्वारा: Haywood, S, और अन्य
प्रकाशित: (1988)

Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
द्वारा: Maxim A. Ladugin, और अन्य
प्रकाशित: (2019-06-01)

PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
द्वारा: Warburton, R, और अन्य
प्रकाशित: (1991)

Growth and application of group III - Antimonides by MOVPE
द्वारा: Klipstein, P, और अन्य
प्रकाशित: (1996)

GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment
द्वारा: Allwood, D, और अन्य
प्रकाशित: (2000)

ELECTROLUMINESCENCE OUT TO 2.1 MU-M OBSERVED IN GASB/IN(X)GA(1-X)SB QUANTUM-WELLS GROWN BY MOVPE
द्वारा: Krier, A, और अन्य
प्रकाशित: (1994)

ABSORPTION CHARACTERISTICS OF GASB/INAS AND INSB/INAS SLSS GROWN ON (111) GAAS BY MOVPE
द्वारा: Lakrimi, M, और अन्य
प्रकाशित: (1991)

InP nanowires grown by SA-MOVPE
द्वारा: Gao, Q, और अन्य
प्रकाशित: (2012)

MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM
द्वारा: Mock, P, और अन्य
प्रकाशित: (2000)

GASB INAS HETEROJUNCTIONS GROWN BY MOVPE - EFFECT OF GAS SWITCHING SEQUENCES ON INTERFACE QUALITY
द्वारा: Lakrimi, M, और अन्य
प्रकाशित: (1991)

Structural Characterization of Movpe Grown Algan/Gan for Hemt Formation
द्वारा: Popok V.N., और अन्य
प्रकाशित: (2018-06-01)

Mn DOPING OF GaN LAYERS GROWN BY MOVPE
द्वारा: Petr Šimek, और अन्य
प्रकाशित: (2012-07-01)

Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor
द्वारा: Booker, G, और अन्य
प्रकाशित: (1997)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE
द्वारा: Roslan, Sharizar, और अन्य
प्रकाशित: (2006)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE /
द्वारा: Zulkafli Othaman, author, और अन्य
प्रकाशित: (2007)

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures
द्वारा: V. Orejuela, और अन्य
प्रकाशित: (2024-09-01)

MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL
द्वारा: Mock, P, और अन्य
प्रकाशित: (2001)

TED, TEM and AFM studies comparing atomic ordering in InAsySb1-y layers grown by MOVPE and MBE
द्वारा: Seong, T, और अन्य
प्रकाशित: (1997)

Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
द्वारा: Norman, A, और अन्य
प्रकाशित: (1997)

OPTIMIZATION OF THE GROWTH BY MOVPE OF STRAINED GASB/INAS DOUBLE HETEROJUNCTIONS AND SUPERLATTICES ON [111] GAAS SUBSTRATES
द्वारा: Lakrimi, M, और अन्य
प्रकाशित: (1992)

InGaN quantum dots grown by MOVPE via a droplet epitaxy route
द्वारा: Rice, J, और अन्य
प्रकाशित: (2004)

An atomic ordering based AlInP unicompositional quantum well grown by MOVPE
द्वारा: Tang, Xiaohong, और अन्य
प्रकाशित: (2013)

MOVPE-Grown Quantum Cascade Laser Structures Studied by Kelvin Probe Force Microscopy
द्वारा: Konstantin Ladutenko, और अन्य
प्रकाशित: (2020-02-01)

Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE
द्वारा: Beata Ściana, और अन्य
प्रकाशित: (2022-04-01)

N-polar AlN buffer growth by MOVPE for transistor applications
द्वारा: Lemettinen, Jori, और अन्य
प्रकाशित: (2019)

MOVPE Technology of Fe-Compensated In PLayers for the Quantum Cascade Laser Applications
द्वारा: Mikołaj Badura
प्रकाशित: (2020-06-01)

MOVPE InP based material for millimetsubmillimeter wave generation and amplificationer and
द्वारा: Włodzimierz Strupiński, और अन्य
प्रकाशित: (2002-03-01)

Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell
द्वारा: Wojciech Dawidowski, और अन्य
प्रकाशित: (2021-07-01)

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE
द्वारा: Xin Li, और अन्य
प्रकाशित: (2017-04-01)

Influence of substrate dopant type on the optical properties of GaInAs/InP multiquantum well structures grown by low pressure MOVPE
द्वारा: Wood, A, और अन्य
प्रकाशित: (1997)

Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates
द्वारा: Soresi Stefano, और अन्य
प्रकाशित: (2023-01-01)

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
द्वारा: Lemettinen, Jori, और अन्य
प्रकाशित: (2019)

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
द्वारा: Kazimieras Badokas, और अन्य
प्रकाशित: (2022-02-01)

Distribution of liposome-encapsulated antimony in dogs
द्वारा: D.A. Schettini, और अन्य
प्रकाशित: (2003-02-01)

The Photoionization Processes of Deep Trap Levels in n-GaN Films Grown by MOVPE Technique on Ammono-GaN Substrates
द्वारा: Piotr Kruszewski, और अन्य
प्रकाशित: (2024-09-01)

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal
द्वारा: Oliver, R, और अन्य
प्रकाशित: (2003)

CYCLOTRON-RESONANCE IN INAS/GASB HETEROSTRUCTURES
द्वारा: Sundaram, G, और अन्य
प्रकाशित: (1992)

GROWTH OF GAINAS/INP MULTI-QUANTUM-WELL PIN PHOTODIODE STRUCTURES BY ATMOSPHERIC-PRESSURE MOVPE
द्वारा: Scott, M, और अन्य
प्रकाशित: (1987)