Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission
We have studied terahertz (THz) emission from arsenic-ion implanted GaAs both experimentally and using a three-dimensional carrier dynamics simulation. A uniform density of vacancies was formed over the optical absorption depth of bulk GaAs samples by performing multienergy implantations of arsenic...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
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2004
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| _version_ | 1797056506508607488 |
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| author | Lloyd-Hughes, J Castro-Camus, E Fraser, MD Jagadish, C Johnston, M |
| author_facet | Lloyd-Hughes, J Castro-Camus, E Fraser, MD Jagadish, C Johnston, M |
| author_sort | Lloyd-Hughes, J |
| collection | OXFORD |
| description | We have studied terahertz (THz) emission from arsenic-ion implanted GaAs both experimentally and using a three-dimensional carrier dynamics simulation. A uniform density of vacancies was formed over the optical absorption depth of bulk GaAs samples by performing multienergy implantations of arsenic ions (1 and 2.4 MeV) and subsequent thermal annealing. In a series of THz emission experiments the frequency of peak THz power was found to increase significantly from 1.4 to 2.2 THz when the ion implantation dose was increased from 10 13 to 1016 cm-3. We used a semiclassical Monte Carlo simulation of ultrafast carrier dynamics to reproduce and explain these results. The effect of the ion-induced damage was included in the simulation by considering carrier scattering at neutral and charged impurities, as well as carrier trapping at defect sites. Higher vacancy concentrations and shorter carrier trapping times both contributed to shorter simulated THz pulses, the latter being more important over experimentally realistic parameter ranges. |
| first_indexed | 2024-03-06T19:23:38Z |
| format | Journal article |
| id | oxford-uuid:1af75570-4946-44d4-9da5-7d42a8ee7568 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T19:23:38Z |
| publishDate | 2004 |
| record_format | dspace |
| spelling | oxford-uuid:1af75570-4946-44d4-9da5-7d42a8ee75682022-03-26T10:57:47ZCarrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emissionJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:1af75570-4946-44d4-9da5-7d42a8ee7568EnglishSymplectic Elements at Oxford2004Lloyd-Hughes, JCastro-Camus, EFraser, MDJagadish, CJohnston, MWe have studied terahertz (THz) emission from arsenic-ion implanted GaAs both experimentally and using a three-dimensional carrier dynamics simulation. A uniform density of vacancies was formed over the optical absorption depth of bulk GaAs samples by performing multienergy implantations of arsenic ions (1 and 2.4 MeV) and subsequent thermal annealing. In a series of THz emission experiments the frequency of peak THz power was found to increase significantly from 1.4 to 2.2 THz when the ion implantation dose was increased from 10 13 to 1016 cm-3. We used a semiclassical Monte Carlo simulation of ultrafast carrier dynamics to reproduce and explain these results. The effect of the ion-induced damage was included in the simulation by considering carrier scattering at neutral and charged impurities, as well as carrier trapping at defect sites. Higher vacancy concentrations and shorter carrier trapping times both contributed to shorter simulated THz pulses, the latter being more important over experimentally realistic parameter ranges. |
| spellingShingle | Lloyd-Hughes, J Castro-Camus, E Fraser, MD Jagadish, C Johnston, M Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission |
| title | Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission |
| title_full | Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission |
| title_fullStr | Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission |
| title_full_unstemmed | Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission |
| title_short | Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission |
| title_sort | carrier dynamics in ion implanted gaas studied by simulation and observation of terahertz emission |
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