Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission
We have studied terahertz (THz) emission from arsenic-ion implanted GaAs both experimentally and using a three-dimensional carrier dynamics simulation. A uniform density of vacancies was formed over the optical absorption depth of bulk GaAs samples by performing multienergy implantations of arsenic...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2004
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