Optical switching in VO(2) films by below-gap excitation
We study the photoinduced insulator-metal transition in V O2, correlating its threshold and dynamics with excitation wavelength. In single crystals, switching can only be induced with photon energies above the 670 meV gap. This contrasts with the case of polycrystalline films, where formation of the...
| Hauptverfasser: | , , , , , , , , , , |
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| Format: | Journal article |
| Sprache: | English |
| Veröffentlicht: |
2008
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