QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON

Deformation induced dislocations in silicon have been found to exhibit different degrees of electrical activity dependent upon whether they were deformed at 420°C or 650°C. Furthermore the effects of copper decoration are also found to vary between dislocations produced at these temperatures. Quanti...

Ausführliche Beschreibung

Bibliographische Detailangaben
Hauptverfasser: Fell, T, Wilshaw, P
Format: Journal article
Sprache:English
Veröffentlicht: Publ by Inst of Physics Publ Ltd 1991
Beschreibung
Zusammenfassung:Deformation induced dislocations in silicon have been found to exhibit different degrees of electrical activity dependent upon whether they were deformed at 420°C or 650°C. Furthermore the effects of copper decoration are also found to vary between dislocations produced at these temperatures. Quantitative analysis of EBIC measurements in terms of the charge at dislocations reveals this behaviour to be due to different defect states.