QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
Deformation induced dislocations in silicon have been found to exhibit different degrees of electrical activity dependent upon whether they were deformed at 420°C or 650°C. Furthermore the effects of copper decoration are also found to vary between dislocations produced at these temperatures. Quanti...
| Main Authors: | , |
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| Format: | Journal article |
| Language: | English |
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Publ by Inst of Physics Publ Ltd
1991
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| _version_ | 1797057252019929088 |
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| author | Fell, T Wilshaw, P |
| author_facet | Fell, T Wilshaw, P |
| author_sort | Fell, T |
| collection | OXFORD |
| description | Deformation induced dislocations in silicon have been found to exhibit different degrees of electrical activity dependent upon whether they were deformed at 420°C or 650°C. Furthermore the effects of copper decoration are also found to vary between dislocations produced at these temperatures. Quantitative analysis of EBIC measurements in terms of the charge at dislocations reveals this behaviour to be due to different defect states. |
| first_indexed | 2024-03-06T19:33:38Z |
| format | Journal article |
| id | oxford-uuid:1e4f96fb-fa4f-43cd-a048-9a0b09f63dbc |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T19:33:38Z |
| publishDate | 1991 |
| publisher | Publ by Inst of Physics Publ Ltd |
| record_format | dspace |
| spelling | oxford-uuid:1e4f96fb-fa4f-43cd-a048-9a0b09f63dbc2022-03-26T11:15:33ZQUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICONJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:1e4f96fb-fa4f-43cd-a048-9a0b09f63dbcEnglishSymplectic Elements at OxfordPubl by Inst of Physics Publ Ltd1991Fell, TWilshaw, PDeformation induced dislocations in silicon have been found to exhibit different degrees of electrical activity dependent upon whether they were deformed at 420°C or 650°C. Furthermore the effects of copper decoration are also found to vary between dislocations produced at these temperatures. Quantitative analysis of EBIC measurements in terms of the charge at dislocations reveals this behaviour to be due to different defect states. |
| spellingShingle | Fell, T Wilshaw, P QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON |
| title | QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON |
| title_full | QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON |
| title_fullStr | QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON |
| title_full_unstemmed | QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON |
| title_short | QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON |
| title_sort | quantitative ebic investigations of deformation induced and copper decorated dislocations in silicon |
| work_keys_str_mv | AT fellt quantitativeebicinvestigationsofdeformationinducedandcopperdecorateddislocationsinsilicon AT wilshawp quantitativeebicinvestigationsofdeformationinducedandcopperdecorateddislocationsinsilicon |