QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON

Deformation induced dislocations in silicon have been found to exhibit different degrees of electrical activity dependent upon whether they were deformed at 420°C or 650°C. Furthermore the effects of copper decoration are also found to vary between dislocations produced at these temperatures. Quanti...

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Detalles Bibliográficos
Autores principales: Fell, T, Wilshaw, P
Formato: Journal article
Lenguaje:English
Publicado: Publ by Inst of Physics Publ Ltd 1991