Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates
When Ti is deposited on Si in the 600-700 °C temperature range, the lattice mismatch between the Ti-containing deposit and the Si substrate causes TiSix nanoislands to form. The nanoislands grow when annealed at temperatures above 800 °C. When the nanoislands (either unannealed or annealed) are expo...
| Main Authors: | , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2002
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