P-type conduction characteristics of lithium-doped ZnO nanowires.

p-type ZnO nanowires (NWs) based on a simple hydrothermal technique with a lithium dopant are demonstrated. It is demonstrated that Li substitution of Zn occurrs because of thermally induced migration due to post-annealing in the presence of oxygen. The stable formation of p-type ZnO:Li NWs is revea...

Full description

Bibliographic Details
Main Authors: Lee, J, Cha, S, Kim, J, Nam, H, Lee, S, Ko, W, Wang, K, Park, J, Hong, J
Format: Journal article
Language:English
Published: 2011
Description
Summary:p-type ZnO nanowires (NWs) based on a simple hydrothermal technique with a lithium dopant are demonstrated. It is demonstrated that Li substitution of Zn occurrs because of thermally induced migration due to post-annealing in the presence of oxygen. The stable formation of p-type ZnO:Li NWs is revealed using a NW field-effect transistor and a simple n-type ZnO thin film/p-type annealed ZnO:Li NW homojunction diode. Copyright © 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim.