P-type conduction characteristics of lithium-doped ZnO nanowires.
p-type ZnO nanowires (NWs) based on a simple hydrothermal technique with a lithium dopant are demonstrated. It is demonstrated that Li substitution of Zn occurrs because of thermally induced migration due to post-annealing in the presence of oxygen. The stable formation of p-type ZnO:Li NWs is revea...
| Main Authors: | , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2011
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| _version_ | 1797057531266203648 |
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| author | Lee, J Cha, S Kim, J Nam, H Lee, S Ko, W Wang, K Park, J Hong, J |
| author_facet | Lee, J Cha, S Kim, J Nam, H Lee, S Ko, W Wang, K Park, J Hong, J |
| author_sort | Lee, J |
| collection | OXFORD |
| description | p-type ZnO nanowires (NWs) based on a simple hydrothermal technique with a lithium dopant are demonstrated. It is demonstrated that Li substitution of Zn occurrs because of thermally induced migration due to post-annealing in the presence of oxygen. The stable formation of p-type ZnO:Li NWs is revealed using a NW field-effect transistor and a simple n-type ZnO thin film/p-type annealed ZnO:Li NW homojunction diode. Copyright © 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim. |
| first_indexed | 2024-03-06T19:37:45Z |
| format | Journal article |
| id | oxford-uuid:1f9c330f-17bb-4215-b423-e030e2de07c2 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T19:37:45Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | oxford-uuid:1f9c330f-17bb-4215-b423-e030e2de07c22022-03-26T11:22:52ZP-type conduction characteristics of lithium-doped ZnO nanowires.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:1f9c330f-17bb-4215-b423-e030e2de07c2EnglishSymplectic Elements at Oxford2011Lee, JCha, SKim, JNam, HLee, SKo, WWang, KPark, JHong, Jp-type ZnO nanowires (NWs) based on a simple hydrothermal technique with a lithium dopant are demonstrated. It is demonstrated that Li substitution of Zn occurrs because of thermally induced migration due to post-annealing in the presence of oxygen. The stable formation of p-type ZnO:Li NWs is revealed using a NW field-effect transistor and a simple n-type ZnO thin film/p-type annealed ZnO:Li NW homojunction diode. Copyright © 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim. |
| spellingShingle | Lee, J Cha, S Kim, J Nam, H Lee, S Ko, W Wang, K Park, J Hong, J P-type conduction characteristics of lithium-doped ZnO nanowires. |
| title | P-type conduction characteristics of lithium-doped ZnO nanowires. |
| title_full | P-type conduction characteristics of lithium-doped ZnO nanowires. |
| title_fullStr | P-type conduction characteristics of lithium-doped ZnO nanowires. |
| title_full_unstemmed | P-type conduction characteristics of lithium-doped ZnO nanowires. |
| title_short | P-type conduction characteristics of lithium-doped ZnO nanowires. |
| title_sort | p type conduction characteristics of lithium doped zno nanowires |
| work_keys_str_mv | AT leej ptypeconductioncharacteristicsoflithiumdopedznonanowires AT chas ptypeconductioncharacteristicsoflithiumdopedznonanowires AT kimj ptypeconductioncharacteristicsoflithiumdopedznonanowires AT namh ptypeconductioncharacteristicsoflithiumdopedznonanowires AT lees ptypeconductioncharacteristicsoflithiumdopedznonanowires AT kow ptypeconductioncharacteristicsoflithiumdopedznonanowires AT wangk ptypeconductioncharacteristicsoflithiumdopedznonanowires AT parkj ptypeconductioncharacteristicsoflithiumdopedznonanowires AT hongj ptypeconductioncharacteristicsoflithiumdopedznonanowires |