Growth of straight InAs-on-GaAs nanowire heterostructures
One of the main motivations for the great interest in semiconductor nanowires is the possibility of easily growing advanced heterostructures that might be difficult or even impossible to achieve in thin films. For III-V semiconductor nanowires, axial heterostructures with an interchange of the group...
| Main Authors: | , , , , , , , , |
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| Formato: | Journal article |
| Idioma: | English |
| Publicado em: |
2011
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