III-V compound semiconductor nanowires for optoelectronic device applications
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in ou...
| Автори: | , , , , , , , , , , |
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| Формат: | Journal article |
| Мова: | English |
| Опубліковано: |
2011
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| _version_ | 1826262812711714816 |
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| author | Gao, Q Joyce, H Paiman, S Kang, J Tan, H Kim, Y Smith, L Jackson, H Yarrison-Rice, J Zou, J Jagadish, C |
| author_facet | Gao, Q Joyce, H Paiman, S Kang, J Tan, H Kim, Y Smith, L Jackson, H Yarrison-Rice, J Zou, J Jagadish, C |
| author_sort | Gao, Q |
| collection | OXFORD |
| description | GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs nanowires with nearly intrinsic exciton lifetime and vertical straight nanowires on Si (111)B substrates. The crystal structure of InP nanowires, i.e., WZ or ZB, can also be engineered by carefully controlling the V/III ratio and catalyst size. © 2011 World Scientific Publishing Company. |
| first_indexed | 2024-03-06T19:42:01Z |
| format | Journal article |
| id | oxford-uuid:2103a944-f727-4a31-ae1b-af3338fa7870 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T19:42:01Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | oxford-uuid:2103a944-f727-4a31-ae1b-af3338fa78702022-03-26T11:30:50ZIII-V compound semiconductor nanowires for optoelectronic device applicationsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:2103a944-f727-4a31-ae1b-af3338fa7870EnglishSymplectic Elements at Oxford2011Gao, QJoyce, HPaiman, SKang, JTan, HKim, YSmith, LJackson, HYarrison-Rice, JZou, JJagadish, CGaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs nanowires with nearly intrinsic exciton lifetime and vertical straight nanowires on Si (111)B substrates. The crystal structure of InP nanowires, i.e., WZ or ZB, can also be engineered by carefully controlling the V/III ratio and catalyst size. © 2011 World Scientific Publishing Company. |
| spellingShingle | Gao, Q Joyce, H Paiman, S Kang, J Tan, H Kim, Y Smith, L Jackson, H Yarrison-Rice, J Zou, J Jagadish, C III-V compound semiconductor nanowires for optoelectronic device applications |
| title | III-V compound semiconductor nanowires for optoelectronic device applications |
| title_full | III-V compound semiconductor nanowires for optoelectronic device applications |
| title_fullStr | III-V compound semiconductor nanowires for optoelectronic device applications |
| title_full_unstemmed | III-V compound semiconductor nanowires for optoelectronic device applications |
| title_short | III-V compound semiconductor nanowires for optoelectronic device applications |
| title_sort | iii v compound semiconductor nanowires for optoelectronic device applications |
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