Charge collection in irradiated HV-CMOS detectors

Charge collection in irradiated HV-CMOS detectors

Active silicon detectors built on p-type substrate are a promising technological solution for large area silicontrackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has tobe evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with diffe...

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المؤلفون الرئيسيون: Hiti, B, Affolder, A, Arndt, K, Bates, R, Benoit, M, Di Bello, F, Blue, A, Bortoletto, D, Buckland, M, Buttar, C, Caragiulo, P, Das, D, Doering, D, Dopke, J, Dragone, A, Ehrler, F, Fadeyev, V, Fedorko, W, Galloway, Z, Gay, C, Grabas, H, Gregor, I, Grenier, P, Grillo, A, Han, Y, Hoeferkamp, M, Hommels, L, Huffman, T, John, J, Kanisauskas, K, Kenney, C, Kramberger, G, Liang, Z, Mandić, I, Maneuski, D, Martinez-Mckinney, F, McMahon, S, Meng, L, Mikuž, M, Muenstermann, D, Nickerson, R, Peric, I, Phillips, P, Plackett, R, Rubbo, F, Ruckman, L, Segal, J, Seidel, S, Seiden, A, Shipsey, I, Song, W, Stanitzki, M, Su, D, Tamma, C, Turchetta, R, Vigani, L, Volk, J, Wang, R, Warren, M, Wilson, F, Worm, S, Xiu, Q, Zhang, J, Zhu, H
التنسيق: Journal article
اللغة:English
منشور في: Elsevier 2018
الوصف
الملخص:Active silicon detectors built on p-type substrate are a promising technological solution for large area silicontrackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has tobe evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities inthe range of 20–1000Ωcmwere irradiated with neutrons and protons up to a fluence of2 × 1015neqcm−2and3.6 × 1015neqcm−2. Charge collection in passive test structures on the chip was evaluated using Edge-TCT andminimum ionising electrons from90Sr. Results were used to assess radiation hardness of the detector in the givenfluence range and to determine parameters of initial acceptor removal in different substrates.

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