Charge collection in irradiated HV-CMOS detectors

Active silicon detectors built on p-type substrate are a promising technological solution for large area silicontrackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has tobe evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with diffe...

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Détails bibliographiques
Auteurs principaux: Hiti, B, Affolder, A, Arndt, K, Bates, R, Benoit, M, Di Bello, F, Blue, A, Bortoletto, D, Buckland, M, Buttar, C, Caragiulo, P, Das, D, Doering, D, Dopke, J, Dragone, A, Ehrler, F, Fadeyev, V, Fedorko, W, Galloway, Z, Gay, C, Grabas, H, Gregor, I, Grenier, P, Grillo, A, Han, Y, Hoeferkamp, M, Hommels, L, Huffman, T, John, J, Kanisauskas, K, Kenney, C, Kramberger, G, Liang, Z, Mandić, I, Maneuski, D, Martinez-Mckinney, F, McMahon, S, Meng, L, Mikuž, M, Muenstermann, D, Nickerson, R, Peric, I, Phillips, P, Plackett, R, Rubbo, F, Ruckman, L, Segal, J, Seidel, S, Seiden, A, Shipsey, I, Song, W, Stanitzki, M, Su, D, Tamma, C, Turchetta, R, Vigani, L, Volk, J, Wang, R, Warren, M, Wilson, F, Worm, S, Xiu, Q, Zhang, J, Zhu, H
Format: Journal article
Langue:English
Publié: Elsevier 2018
_version_ 1826262985227632640
author Hiti, B
Affolder, A
Arndt, K
Bates, R
Benoit, M
Di Bello, F
Blue, A
Bortoletto, D
Buckland, M
Buttar, C
Caragiulo, P
Das, D
Doering, D
Dopke, J
Dragone, A
Ehrler, F
Fadeyev, V
Fedorko, W
Galloway, Z
Gay, C
Grabas, H
Gregor, I
Grenier, P
Grillo, A
Han, Y
Hoeferkamp, M
Hommels, L
Huffman, T
John, J
Kanisauskas, K
Kenney, C
Kramberger, G
Liang, Z
Mandić, I
Maneuski, D
Martinez-Mckinney, F
McMahon, S
Meng, L
Mikuž, M
Muenstermann, D
Nickerson, R
Peric, I
Phillips, P
Plackett, R
Rubbo, F
Ruckman, L
Segal, J
Seidel, S
Seiden, A
Shipsey, I
Song, W
Stanitzki, M
Su, D
Tamma, C
Turchetta, R
Vigani, L
Volk, J
Wang, R
Warren, M
Wilson, F
Worm, S
Xiu, Q
Zhang, J
Zhu, H
author_facet Hiti, B
Affolder, A
Arndt, K
Bates, R
Benoit, M
Di Bello, F
Blue, A
Bortoletto, D
Buckland, M
Buttar, C
Caragiulo, P
Das, D
Doering, D
Dopke, J
Dragone, A
Ehrler, F
Fadeyev, V
Fedorko, W
Galloway, Z
Gay, C
Grabas, H
Gregor, I
Grenier, P
Grillo, A
Han, Y
Hoeferkamp, M
Hommels, L
Huffman, T
John, J
Kanisauskas, K
Kenney, C
Kramberger, G
Liang, Z
Mandić, I
Maneuski, D
Martinez-Mckinney, F
McMahon, S
Meng, L
Mikuž, M
Muenstermann, D
Nickerson, R
Peric, I
Phillips, P
Plackett, R
Rubbo, F
Ruckman, L
Segal, J
Seidel, S
Seiden, A
Shipsey, I
Song, W
Stanitzki, M
Su, D
Tamma, C
Turchetta, R
Vigani, L
Volk, J
Wang, R
Warren, M
Wilson, F
Worm, S
Xiu, Q
Zhang, J
Zhu, H
author_sort Hiti, B
collection OXFORD
description Active silicon detectors built on p-type substrate are a promising technological solution for large area silicontrackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has tobe evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities inthe range of 20–1000Ωcmwere irradiated with neutrons and protons up to a fluence of2 × 1015neqcm−2and3.6 × 1015neqcm−2. Charge collection in passive test structures on the chip was evaluated using Edge-TCT andminimum ionising electrons from90Sr. Results were used to assess radiation hardness of the detector in the givenfluence range and to determine parameters of initial acceptor removal in different substrates.
first_indexed 2024-03-06T19:44:30Z
format Journal article
id oxford-uuid:21ce5535-6ee7-4f3c-9a76-73b5d9ebc80b
institution University of Oxford
language English
last_indexed 2024-03-06T19:44:30Z
publishDate 2018
publisher Elsevier
record_format dspace
spelling oxford-uuid:21ce5535-6ee7-4f3c-9a76-73b5d9ebc80b2022-03-26T11:35:31ZCharge collection in irradiated HV-CMOS detectorsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:21ce5535-6ee7-4f3c-9a76-73b5d9ebc80bEnglishSymplectic Elements at OxfordElsevier2018Hiti, BAffolder, AArndt, KBates, RBenoit, MDi Bello, FBlue, ABortoletto, DBuckland, MButtar, CCaragiulo, PDas, DDoering, DDopke, JDragone, AEhrler, FFadeyev, VFedorko, WGalloway, ZGay, CGrabas, HGregor, IGrenier, PGrillo, AHan, YHoeferkamp, MHommels, LHuffman, TJohn, JKanisauskas, KKenney, CKramberger, GLiang, ZMandić, IManeuski, DMartinez-Mckinney, FMcMahon, SMeng, LMikuž, MMuenstermann, DNickerson, RPeric, IPhillips, PPlackett, RRubbo, FRuckman, LSegal, JSeidel, SSeiden, AShipsey, ISong, WStanitzki, MSu, DTamma, CTurchetta, RVigani, LVolk, JWang, RWarren, MWilson, FWorm, SXiu, QZhang, JZhu, HActive silicon detectors built on p-type substrate are a promising technological solution for large area silicontrackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has tobe evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities inthe range of 20–1000Ωcmwere irradiated with neutrons and protons up to a fluence of2 × 1015neqcm−2and3.6 × 1015neqcm−2. Charge collection in passive test structures on the chip was evaluated using Edge-TCT andminimum ionising electrons from90Sr. Results were used to assess radiation hardness of the detector in the givenfluence range and to determine parameters of initial acceptor removal in different substrates.
spellingShingle Hiti, B
Affolder, A
Arndt, K
Bates, R
Benoit, M
Di Bello, F
Blue, A
Bortoletto, D
Buckland, M
Buttar, C
Caragiulo, P
Das, D
Doering, D
Dopke, J
Dragone, A
Ehrler, F
Fadeyev, V
Fedorko, W
Galloway, Z
Gay, C
Grabas, H
Gregor, I
Grenier, P
Grillo, A
Han, Y
Hoeferkamp, M
Hommels, L
Huffman, T
John, J
Kanisauskas, K
Kenney, C
Kramberger, G
Liang, Z
Mandić, I
Maneuski, D
Martinez-Mckinney, F
McMahon, S
Meng, L
Mikuž, M
Muenstermann, D
Nickerson, R
Peric, I
Phillips, P
Plackett, R
Rubbo, F
Ruckman, L
Segal, J
Seidel, S
Seiden, A
Shipsey, I
Song, W
Stanitzki, M
Su, D
Tamma, C
Turchetta, R
Vigani, L
Volk, J
Wang, R
Warren, M
Wilson, F
Worm, S
Xiu, Q
Zhang, J
Zhu, H
Charge collection in irradiated HV-CMOS detectors
title Charge collection in irradiated HV-CMOS detectors
title_full Charge collection in irradiated HV-CMOS detectors
title_fullStr Charge collection in irradiated HV-CMOS detectors
title_full_unstemmed Charge collection in irradiated HV-CMOS detectors
title_short Charge collection in irradiated HV-CMOS detectors
title_sort charge collection in irradiated hv cmos detectors
work_keys_str_mv AT hitib chargecollectioninirradiatedhvcmosdetectors
AT affoldera chargecollectioninirradiatedhvcmosdetectors
AT arndtk chargecollectioninirradiatedhvcmosdetectors
AT batesr chargecollectioninirradiatedhvcmosdetectors
AT benoitm chargecollectioninirradiatedhvcmosdetectors
AT dibellof chargecollectioninirradiatedhvcmosdetectors
AT bluea chargecollectioninirradiatedhvcmosdetectors
AT bortolettod chargecollectioninirradiatedhvcmosdetectors
AT bucklandm chargecollectioninirradiatedhvcmosdetectors
AT buttarc chargecollectioninirradiatedhvcmosdetectors
AT caragiulop chargecollectioninirradiatedhvcmosdetectors
AT dasd chargecollectioninirradiatedhvcmosdetectors
AT doeringd chargecollectioninirradiatedhvcmosdetectors
AT dopkej chargecollectioninirradiatedhvcmosdetectors
AT dragonea chargecollectioninirradiatedhvcmosdetectors
AT ehrlerf chargecollectioninirradiatedhvcmosdetectors
AT fadeyevv chargecollectioninirradiatedhvcmosdetectors
AT fedorkow chargecollectioninirradiatedhvcmosdetectors
AT gallowayz chargecollectioninirradiatedhvcmosdetectors
AT gayc chargecollectioninirradiatedhvcmosdetectors
AT grabash chargecollectioninirradiatedhvcmosdetectors
AT gregori chargecollectioninirradiatedhvcmosdetectors
AT grenierp chargecollectioninirradiatedhvcmosdetectors
AT grilloa chargecollectioninirradiatedhvcmosdetectors
AT hany chargecollectioninirradiatedhvcmosdetectors
AT hoeferkampm chargecollectioninirradiatedhvcmosdetectors
AT hommelsl chargecollectioninirradiatedhvcmosdetectors
AT huffmant chargecollectioninirradiatedhvcmosdetectors
AT johnj chargecollectioninirradiatedhvcmosdetectors
AT kanisauskask chargecollectioninirradiatedhvcmosdetectors
AT kenneyc chargecollectioninirradiatedhvcmosdetectors
AT krambergerg chargecollectioninirradiatedhvcmosdetectors
AT liangz chargecollectioninirradiatedhvcmosdetectors
AT mandici chargecollectioninirradiatedhvcmosdetectors
AT maneuskid chargecollectioninirradiatedhvcmosdetectors
AT martinezmckinneyf chargecollectioninirradiatedhvcmosdetectors
AT mcmahons chargecollectioninirradiatedhvcmosdetectors
AT mengl chargecollectioninirradiatedhvcmosdetectors
AT mikuzm chargecollectioninirradiatedhvcmosdetectors
AT muenstermannd chargecollectioninirradiatedhvcmosdetectors
AT nickersonr chargecollectioninirradiatedhvcmosdetectors
AT perici chargecollectioninirradiatedhvcmosdetectors
AT phillipsp chargecollectioninirradiatedhvcmosdetectors
AT plackettr chargecollectioninirradiatedhvcmosdetectors
AT rubbof chargecollectioninirradiatedhvcmosdetectors
AT ruckmanl chargecollectioninirradiatedhvcmosdetectors
AT segalj chargecollectioninirradiatedhvcmosdetectors
AT seidels chargecollectioninirradiatedhvcmosdetectors
AT seidena chargecollectioninirradiatedhvcmosdetectors
AT shipseyi chargecollectioninirradiatedhvcmosdetectors
AT songw chargecollectioninirradiatedhvcmosdetectors
AT stanitzkim chargecollectioninirradiatedhvcmosdetectors
AT sud chargecollectioninirradiatedhvcmosdetectors
AT tammac chargecollectioninirradiatedhvcmosdetectors
AT turchettar chargecollectioninirradiatedhvcmosdetectors
AT viganil chargecollectioninirradiatedhvcmosdetectors
AT volkj chargecollectioninirradiatedhvcmosdetectors
AT wangr chargecollectioninirradiatedhvcmosdetectors
AT warrenm chargecollectioninirradiatedhvcmosdetectors
AT wilsonf chargecollectioninirradiatedhvcmosdetectors
AT worms chargecollectioninirradiatedhvcmosdetectors
AT xiuq chargecollectioninirradiatedhvcmosdetectors
AT zhangj chargecollectioninirradiatedhvcmosdetectors
AT zhuh chargecollectioninirradiatedhvcmosdetectors