Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates.

Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates.

Vertically oriented GaAs nanowires (NWs) are grown on Si(111) substrates using metal-organic chemical vapor deposition. Controlled epitaxial growth along the <111> direction is demonstrated following the deposition of thin GaAs buffer layers and the elimination of structural defects, s...

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Үндсэн зохиолчид: Kang, J, Gao, Q, Parkinson, P, Joyce, H, Tan, H, Kim, Y, Guo, Y, Xu, H, Zou, J, Jagadish, C
Формат: Journal article
Хэл сонгох:English
Хэвлэсэн: 2012

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