Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure

Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure

Εμφάνιση άλλων εκδόσεων (1)

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς:	Smith, J, Klipstein, P, Grey, R, Hill, G
Μορφή:	Journal article
Έκδοση:	1998

Παρόμοια τεκμήρια

Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure
ανά: Smith, J, κ.ά.
Έκδοση: (1998)

Resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under elevated hydrostatic pressure
ανά: Smith, J, κ.ά.
Έκδοση: (1998)

Resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under elevated hydrostatic pressure
ανά: Smith, J, κ.ά.
Έκδοση: (1998)

Observation of inter-Landau-level transitions in resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under hydrostatic pressure
ανά: Smith, J, κ.ά.
Έκδοση: (1998)

Observation of inter-Landau-level transitions in resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under hydrostatic pressure
ανά: Smith, J, κ.ά.
Έκδοση: (1998)

The role of interface quality in resonant tunneling between transverse X-states in GaAs/AlAs double barrier structures pressurised beyond the type II transition
ανά: Smith, J, κ.ά.
Έκδοση: (1995)

Optical investigation of tunneling in AlAs/GaAs/AlAs double-barrier diodes.
ανά: Andrews, SR, κ.ά.
Έκδοση: (1993)

THE ROLE OF INTERFACE QUALITY IN RESONANT-TUNNELING BETWEEN TRANSVERSE X-STATES IN GAAS/ALAS DOUBLE-BARRIER STRUCTURES PRESSURIZED BEYOND THE TYPE-II TRANSITION
ανά: Smith, J, κ.ά.
Έκδοση: (1995)

Enhancement of 2D → 2D tunneling by Γ-XZ mixing in GaAs/AlAs resonant tunneling structures at high pressure
ανά: Im, H, κ.ά.
Έκδοση: (1999)

Enhancement of 2D -> 2D tunneling by Gamma-X-Z mixing in GaAs/AlAs resonant tunneling structures at high pressure
ανά: Im, H, κ.ά.
Έκδοση: (1999)

Electronic Tunneling and Electric Domains in GaAs/AlAs Superlattices at Room Temperature
ανά: Altukhov I.V., κ.ά.
Έκδοση: (2018-01-01)

The indentation response of GaAs-AlAs heterostructures
ανά: Castell, M, κ.ά.
Έκδοση: (1996)

GaAs/AlAs/AlGaAs quantum well infrared photodetector
ανά: Fan, Weijun
Έκδοση: (2008)

Magneto-photoluminescence of GaAs/AlGaAs heterojunctions under hydrostatic pressure
ανά: Priest, A, κ.ά.
Έκδοση: (1998)

Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy
ανά: Bosman, Michel, κ.ά.
Έκδοση: (2013)

Resonant Raman scattering from phonons in GaAs/(GaAs)m(AlAs) n quantum wire structures
ανά: Maciel, A, κ.ά.
Έκδοση: (1995)

Resonant Raman scattering from phonons in GaAs/(GaAs)(m)(AlAs)(n) quantum wire structures
ανά: Maciel, A, κ.ά.
Έκδοση: (1996)

Resonant LO phonon enhanced conductivity in GaAs-AlAs superlattices
ανά: Dalton, K, κ.ά.
Έκδοση: (2001)

First–Principles Calculations of Band Offsets in GaAs/AlAs System
ανά: Seiyed Hamid Reza Shojaei, κ.ά.
Έκδοση: (2022-01-01)

Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms
ανά: Chia-Chu Cheng, κ.ά.
Έκδοση: (2018-09-01)

Research Paper: The Effect of Hydrostatic Pressure on the Electronic and Optical Properties of GaAs
ανά: Sina Heydari, κ.ά.
Έκδοση: (2022-12-01)

Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers
ανά: David Gonzalez, κ.ά.
Έκδοση: (2023-02-01)

Electron transport in confined structures in very high mobility GaAs in perpendicular magnetic fields
ανά: Radu, Iuliana
Έκδοση: (2010)

Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice
ανά: Hofmann, Felix, κ.ά.
Έκδοση: (2013)

Intrinsic to extrinsic phonon lifetime transition in a GaAs-AlAs superlattice.
ανά: Hofmann, F, κ.ά.
Έκδοση: (2013)

Exciton quantum beats in GaAs/AlAs disk-shaped quantum dots
ανά: Thi Dieu Hien Le, κ.ά.
Έκδοση: (2023-06-01)

Long-term stability of GaAs/AlAs terahertz quantum-cascade lasers
ανά: L. Schrottke, κ.ά.
Έκδοση: (2022-08-01)

High Photoconductivity in Heavily Doped GaAs/AlAs Superlattices with Electric Domains
ανά: Paprotskiy S.K., κ.ά.
Έκδοση: (2018-01-01)

Polaron density of states of AlAs/GaAs/AlAs and PbS/PbTe/PbS type quantum well
ανά: V.I.Boichuk, κ.ά.
Έκδοση: (2007-01-01)

Temperature characterization of GaAs/AlGaAs connecting tunnel diodes
ανά: Kontrosh Evgeniy, κ.ά.
Έκδοση: (2023-12-01)

Lifetime of sub-THz coherent acoustic phonons in a GaAs-AlAs superlattice
ανά: Maznev, A, κ.ά.
Έκδοση: (2013)

Lifetime of sub-THz coherent acoustic phonons in a GaAs-AlAs superlattice
ανά: Maznev, Alexei, κ.ά.
Έκδοση: (2013)

Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate
ανά: Nazaret Ruiz, κ.ά.
Έκδοση: (2022-07-01)

Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer
ανά: Peter D. Nguyen, κ.ά.
Έκδοση: (2015-01-01)

Tunnelling through a GaAs/(AlGa)As coupled double-quantum well heterostructure
ανά: Robert Velasquez, κ.ά.
Έκδοση: (2002-12-01)

Lattice Matched AlAs/GaAs/GaAs0.94Bi0.0583/GaAs0.91Bi0.0857 Multi-Junction Solar Cell with Optimized Thickness: A Theoretical Approach
ανά: ALAMGIR Badsha, κ.ά.
Έκδοση: (2020-10-01)

Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel
ανά: Natalia Vetrova, κ.ά.
Έκδοση: (2023-09-01)

Perpendicular magnetic anisotropy in the Heusler alloy Co2TiSi/GaAs(001) hybrid structure
ανά: M. T. Dau, κ.ά.
Έκδοση: (2015-05-01)

IN0.2GA0.8AS/GAAS INTERFACE REVEALED BY AN ALAS MARKER LAYER
ανά: Glaisher, R, κ.ά.
Έκδοση: (1993)

The effect of electric field on an on-center hydrogenic impurity spherical quantum dot GaAs/AlAs
ανά: M Abdollahi, κ.ά.
Έκδοση: (2012-09-01)