The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy
The influence of Sn doping on the growth of In2 O3 on Y-stabilized ZrO2 (100) by oxygen plasma assisted molecular beam epitaxy has been investigated over a range of substrate temperatures between 650 and 900 °C. The extent of dopant incorporation under a constant Sn flux decreases monotonically with...
| Main Authors: | , , , , , , , , , |
|---|---|
| 格式: | Journal article |
| 语言: | English |
| 出版: |
2009
|
| _version_ | 1826263375146909696 |
|---|---|
| author | Bourlange, A Payne, D Palgrave, R Zhang, H Foord, J Egdell, R Jacobs, R Veal, T King, P McConville, C |
| author_facet | Bourlange, A Payne, D Palgrave, R Zhang, H Foord, J Egdell, R Jacobs, R Veal, T King, P McConville, C |
| author_sort | Bourlange, A |
| collection | OXFORD |
| description | The influence of Sn doping on the growth of In2 O3 on Y-stabilized ZrO2 (100) by oxygen plasma assisted molecular beam epitaxy has been investigated over a range of substrate temperatures between 650 and 900 °C. The extent of dopant incorporation under a constant Sn flux decreases monotonically with increasing substrate temperature, although the n -type carrier concentration in "overdoped" films grown at 650 °C is lower than in films with a lower Sn concentration grown at 750 °C. The small increase in lattice parameter associated with Sn doping leads to improved matching with the substrate and suppresses breakup of the films into square islands observed in high temperature growth of undoped In2 O 3 on Y-stabilized ZrO2 (100). Plasmon energies derived from infrared reflection spectra of Sn-doped films are found to be close to satellite energies in core level photoemission spectroscopy, but for a nominally undoped reference sample there is evidence for carrier accumulation at the surface. This influences both the In 3d core line shape and the intensity of a peak close to the Fermi energy associated with photoemission from the conduction band. © 2009 American Institute of Physics. |
| first_indexed | 2024-03-06T19:50:46Z |
| format | Journal article |
| id | oxford-uuid:23e75aa5-da28-40ff-b203-62096ce16b71 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T19:50:46Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | oxford-uuid:23e75aa5-da28-40ff-b203-62096ce16b712022-03-26T11:46:47ZThe influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxyJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:23e75aa5-da28-40ff-b203-62096ce16b71EnglishSymplectic Elements at Oxford2009Bourlange, APayne, DPalgrave, RZhang, HFoord, JEgdell, RJacobs, RVeal, TKing, PMcConville, CThe influence of Sn doping on the growth of In2 O3 on Y-stabilized ZrO2 (100) by oxygen plasma assisted molecular beam epitaxy has been investigated over a range of substrate temperatures between 650 and 900 °C. The extent of dopant incorporation under a constant Sn flux decreases monotonically with increasing substrate temperature, although the n -type carrier concentration in "overdoped" films grown at 650 °C is lower than in films with a lower Sn concentration grown at 750 °C. The small increase in lattice parameter associated with Sn doping leads to improved matching with the substrate and suppresses breakup of the films into square islands observed in high temperature growth of undoped In2 O 3 on Y-stabilized ZrO2 (100). Plasmon energies derived from infrared reflection spectra of Sn-doped films are found to be close to satellite energies in core level photoemission spectroscopy, but for a nominally undoped reference sample there is evidence for carrier accumulation at the surface. This influences both the In 3d core line shape and the intensity of a peak close to the Fermi energy associated with photoemission from the conduction band. © 2009 American Institute of Physics. |
| spellingShingle | Bourlange, A Payne, D Palgrave, R Zhang, H Foord, J Egdell, R Jacobs, R Veal, T King, P McConville, C The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy |
| title | The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy |
| title_full | The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy |
| title_fullStr | The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy |
| title_full_unstemmed | The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy |
| title_short | The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy |
| title_sort | influence of sn doping on the growth of in2o3 on y stabilized zro2 100 by oxygen plasma assisted molecular beam epitaxy |
| work_keys_str_mv | AT bourlangea theinfluenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT payned theinfluenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT palgraver theinfluenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT zhangh theinfluenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT foordj theinfluenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT egdellr theinfluenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT jacobsr theinfluenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT vealt theinfluenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT kingp theinfluenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT mcconvillec theinfluenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT bourlangea influenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT payned influenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT palgraver influenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT zhangh influenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT foordj influenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT egdellr influenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT jacobsr influenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT vealt influenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT kingp influenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy AT mcconvillec influenceofsndopingonthegrowthofin2o3onystabilizedzro2100byoxygenplasmaassistedmolecularbeamepitaxy |