The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy

The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy

The influence of Sn doping on the growth of In2 O3 on Y-stabilized ZrO2 (100) by oxygen plasma assisted molecular beam epitaxy has been investigated over a range of substrate temperatures between 650 and 900 °C. The extent of dopant incorporation under a constant Sn flux decreases monotonically with...

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Bibliographic Details
Main Authors:	Bourlange, A, Payne, D, Palgrave, R, Zhang, H, Foord, J, Egdell, R, Jacobs, R, Veal, T, King, P, McConville, C
Format:	Journal article
Language:	English
Published:	2009

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