Ion damage buildup and amorphization processes in GaAs-AlxGa1-xAs multilayers
Auteurs principaux: | Tan, H, Jagadish, C, Williams, J, Zou, J, Cockayne, D |
---|---|
Format: | Journal article |
Publié: |
1996
|
Documents similaires
-
ION DAMAGE BUILDUP AND AMORPHIZATION PROCESSES IN ALXGA1-XAS
par: Tan, H, et autres
Publié: (1995) -
Current Density of AlxGa1-xAs/GaAs Superlattice
par: Ahmed Z. Obaid, et autres
Publié: (2024-09-01) -
Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots
par: Y. C. Chang, et autres
Publié: (2015-06-01) -
Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires
par: Jiang, N, et autres
Publié: (2012) -
SIMULATION OF SOLAR CELLS BASED ON HETEROSTRUCTURES AlxGa1-xAs - InxGa1-xAs - GaAs
par: Oleg V. Devitsky, et autres
Publié: (2022-05-01)