Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN
The effects of oxygen plasma treatment prior to metal contact deposition have been studied for both n-and p-GaN, as well as n-AlGaN. In n-GaN, the as-deposited Ti/Al contacts change from rectifying to ohmic, and further improvements are observed after rapid thermal annealing (RTA). A specific contac...
| Main Authors: | , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2004
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| _version_ | 1826263651999285248 |
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| author | Yan, J Kappers, M Crossley, A McAleese, C Phillips, W Humphreys, C |
| author_facet | Yan, J Kappers, M Crossley, A McAleese, C Phillips, W Humphreys, C |
| author_sort | Yan, J |
| collection | OXFORD |
| description | The effects of oxygen plasma treatment prior to metal contact deposition have been studied for both n-and p-GaN, as well as n-AlGaN. In n-GaN, the as-deposited Ti/Al contacts change from rectifying to ohmic, and further improvements are observed after rapid thermal annealing (RTA). A specific contact resistivity better than 10-7 Ω cm2 was obtained using a plasma treatment of 20 s at 30 W and 0.2 mbar, followed by RTA at 500 °C in argon. The I-V characteristics of the Ti/Al contacts degraded when plasma treatments were performed for a longer time and/or at increased plasma pressure. However, in contrast to n-GaN, the electrical properties of the Ni/Au contacts to p-GaN and Ti/Al contacts to n-Al0.15Ga 0.85N deteriorated following oxygen plasma treatment. X-ray photoelectron spectroscopy (XPS) was used in order to help elucidate the mechanisms behind these effects. © 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim. |
| first_indexed | 2024-03-06T19:55:12Z |
| format | Journal article |
| id | oxford-uuid:25535ad2-09aa-442c-bb0c-9cdea7a97a46 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T19:55:12Z |
| publishDate | 2004 |
| record_format | dspace |
| spelling | oxford-uuid:25535ad2-09aa-442c-bb0c-9cdea7a97a462022-03-26T11:55:04ZEffects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaNJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:25535ad2-09aa-442c-bb0c-9cdea7a97a46EnglishSymplectic Elements at Oxford2004Yan, JKappers, MCrossley, AMcAleese, CPhillips, WHumphreys, CThe effects of oxygen plasma treatment prior to metal contact deposition have been studied for both n-and p-GaN, as well as n-AlGaN. In n-GaN, the as-deposited Ti/Al contacts change from rectifying to ohmic, and further improvements are observed after rapid thermal annealing (RTA). A specific contact resistivity better than 10-7 Ω cm2 was obtained using a plasma treatment of 20 s at 30 W and 0.2 mbar, followed by RTA at 500 °C in argon. The I-V characteristics of the Ti/Al contacts degraded when plasma treatments were performed for a longer time and/or at increased plasma pressure. However, in contrast to n-GaN, the electrical properties of the Ni/Au contacts to p-GaN and Ti/Al contacts to n-Al0.15Ga 0.85N deteriorated following oxygen plasma treatment. X-ray photoelectron spectroscopy (XPS) was used in order to help elucidate the mechanisms behind these effects. © 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim. |
| spellingShingle | Yan, J Kappers, M Crossley, A McAleese, C Phillips, W Humphreys, C Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN |
| title | Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN |
| title_full | Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN |
| title_fullStr | Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN |
| title_full_unstemmed | Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN |
| title_short | Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN |
| title_sort | effects of oxygen plasma treatment on the formation of ohmic contacts to gan and algan |
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