Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN

Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN

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The effects of oxygen plasma treatment prior to metal contact deposition have been studied for both n-and p-GaN, as well as n-AlGaN. In n-GaN, the as-deposited Ti/Al contacts change from rectifying to ohmic, and further improvements are observed after rapid thermal annealing (RTA). A specific contac...

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Xehetasun bibliografikoak
Egile Nagusiak:	Yan, J, Kappers, M, Crossley, A, McAleese, C, Phillips, W, Humphreys, C
Formatua:	Journal article
Hizkuntza:	English
Argitaratua:	2004

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