Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN
The effects of oxygen plasma treatment prior to metal contact deposition have been studied for both n-and p-GaN, as well as n-AlGaN. In n-GaN, the as-deposited Ti/Al contacts change from rectifying to ohmic, and further improvements are observed after rapid thermal annealing (RTA). A specific contac...
| Những tác giả chính: | , , , , , |
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| Định dạng: | Journal article |
| Ngôn ngữ: | English |
| Được phát hành: |
2004
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