Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells

Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells

Bibliografske podrobnosti
Main Authors:	Bennett, SE, Saxey, D, Kappers, M, Barnard, J, Humphreys, C, Smith, G, Oliver, R
Format:	Journal article
Izdano:	2011

Podobne knjige/članki

Three-dimensional atom probe studies of an InxGa1-xN/GaN multiple quantum well structure: Assessment of possible indium clustering
od: Galtrey, M, et al.
Izdano: (2007)

Carrier dynamics of InxGa1-xN quantum disks embedded in GaN nanocolumns
od: Holmes, M, et al.
Izdano: (2011)

Carrier dynamics of InxGa1-xN quantum disks embedded in GaN nanocolumns
od: Holmes, M, et al.
Izdano: (2011)

Potentials of InxGa1-xN photovoltaic tandems
od: F. Bouzid, et al.
Izdano: (2011-03-01)

Optical studies on InxGa1-xN quantum disks
od: Holmes, M, et al.
Izdano: (2011)

Optical Studies on InxGa1-xN quantum disks
od: Holmes, M, et al.
Izdano: (2011)

Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods
od: Park, Y, et al.
Izdano: (2018)

Optical studies on a single GaN nanocolumn containing a single InxGa1-xN quantum disk
od: Holmes, M, et al.
Izdano: (2011)

Performance analysis of high efficiency InxGa1−xN/GaN intermediate band quantum dot solar cells
od: Injamam Ul Islam Chowdhury, et al.
Izdano: (2018-06-01)

Numerical Optimization of a Tandem Solar Cell based on InxGa1-xN
od: François Beceau Pelap, et al.
Izdano: (2021-06-01)

Response to "Comment on 'Three-dimensional atom probe studies of an InxGa1-N-x/GaN multiple quantum well structure: assessment of possible indium clustering'" [Appl. Phys. Lett. 91, 176101, (2007)]
od: Galtrey, M, et al.
Izdano: (2007)

DFT Calculation on the Electronic Structure and Optical Properties of InxGa1-xN Alloy Semiconductors
od: Xuewen WANG, et al.
Izdano: (2019-12-01)

External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende InxGa1−xN/GaN Symmetric Coupled Quantum Dots
od: Guang-Xin Wang, et al.
Izdano: (2017-01-01)

Simulation on the roles of the number of quantum well and doping in InxGa1-xN Multiple Quantum Wells LEDs
od: Zainal, N., et al.
Izdano: (2014)

Determination of the surface band bending in InxGa1−xN films by hard x-ray photoemission spectroscopy
od: Mickael Lozac'h, Shigenori Ueda, Shitao Liu, Hideki Yoshikawa, Sang Liwen, Xinqiang Wang, Bo Shen, Kazuaki Sakoda, Keisuke Kobayashi and Masatomo Sumiya
Izdano: (2013-01-01)

Competitive In and Ga incorporations for InxGa1-xN (0.29<x<0.36) nanorods grown at a moderate temperature
od: S. M. Hamad, et al.
Izdano: (2013-07-01)

Quantum confined Stark effect and corresponding lifetime reduction in a single InxGa1-xN quantum disk
od: Holmes, M, et al.
Izdano: (2009)

Internal Field Shielding and the Quantum Confined Stark Effect in a Single InxGa1-xN Quantum Disk
od: Holmes, M, et al.
Izdano: (2011)

Three-dimensional atom probe analysis of green- and blue-emitting In(x)Ga(1-x)N/GaN multiple quantum well structures
od: Galtrey, M, et al.
Izdano: (2008)

Atom probe revels the structure of InxGe1-xN based quantum wells in three dimensions
od: Galtrey, M, et al.
Izdano: (2008)

Optically pumped InxGa₁âxN/InyGa₁âyN multiple quantum well vertical cavity surface emitting laser operating at room temperature.
od: Chen, Zhen, et al.
Izdano: (2003)

Growth modes in heteroepitaxy of InGaN on GaN
od: Oliver, R, et al.
Izdano: (2005)

Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots
od: Liao, X, et al.
Izdano: (1999)

The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy
od: Oliver, R, et al.
Izdano: (2004)

SIMULATION OF SOLAR CELLS BASED ON HETEROSTRUCTURES AlxGa1-xAs - InxGa1-xAs - GaAs
od: Oleg V. Devitsky, et al.
Izdano: (2022-05-01)

Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots
od: Liao, X, et al.
Izdano: (1998)

Arsenic Irradiation Induced Atomic Interdiffusion of InxGa1-xAs/InP Quantum Well Structures
od: P.L. Gareso,, et al.
Izdano: (2012-12-01)

Observation of magnetophotoluminescence from a GaN/AlxGa1-xN heterojunction
od: Shields, P, et al.
Izdano: (2002)

Electrically driven single InGaN/GaN quantum dot emission
od: Jarjour, A, et al.
Izdano: (2008)

Carrier localization mechanisms in InGaN/GaN quantum wells
od: Watson-Parris, D, et al.
Izdano: (2011)

Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots
od: Lobo, C, et al.
Izdano: (2000)

Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
od: Zou, J, et al.
Izdano: (1999)

Synthesizing InxGa1−xAs using molten In and GaAs by the sessile drop method at 400–600 °C
od: Liang Zhao, et al.
Izdano: (2017-06-01)

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot
od: Jarjour, A, et al.
Izdano: (2007)

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot.
od: Jarjour, A, et al.
Izdano: (2007)

Microstructural origins of localization in InGaN quantum wells
od: Oliver, R, et al.
Izdano: (2010)

Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach
od: Ong, Beng Sheng
Izdano: (2014)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
od: Kyaw, Zabu, et al.
Izdano: (2014)

Critical parameters for the presence of a 2DEG in GaN/AlxGa1−xN heterostructures
od: T. Scheinert, et al.
Izdano: (2019-12-01)

Thermal oxidation of lattice mismatched Al1-xInxN films on GaN
od: Elia Palmese, et al.
Izdano: (2023-09-01)