Evolution of wurtzite structured GaAs shells around InAs nanowire cores

GaAs was radially deposited on InAs nanowires by metal-organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanow...

Full description

Bibliographic Details
Main Authors: Paladugu, M, Zou, J, Guo, Y, Zhang, X, Joyce, H, Gao, Q, Tan, H, Jagadish, C, Kim, Y
Format: Journal article
Language:English
Published: 2009
_version_ 1826263714825764864
author Paladugu, M
Zou, J
Guo, Y
Zhang, X
Joyce, H
Gao, Q
Tan, H
Jagadish, C
Kim, Y
author_facet Paladugu, M
Zou, J
Guo, Y
Zhang, X
Joyce, H
Gao, Q
Tan, H
Jagadish, C
Kim, Y
author_sort Paladugu, M
collection OXFORD
description GaAs was radially deposited on InAs nanowires by metal-organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanowire cores. The fundamental reason of structural evolution in terms of material nucleation and interfacial structure is given. © to the authors 2009.
first_indexed 2024-03-06T19:56:12Z
format Journal article
id oxford-uuid:25aeaada-4b13-45fa-82c6-a76c40299275
institution University of Oxford
language English
last_indexed 2024-03-06T19:56:12Z
publishDate 2009
record_format dspace
spelling oxford-uuid:25aeaada-4b13-45fa-82c6-a76c402992752022-03-26T11:56:52ZEvolution of wurtzite structured GaAs shells around InAs nanowire coresJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:25aeaada-4b13-45fa-82c6-a76c40299275EnglishSymplectic Elements at Oxford2009Paladugu, MZou, JGuo, YZhang, XJoyce, HGao, QTan, HJagadish, CKim, YGaAs was radially deposited on InAs nanowires by metal-organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanowire cores. The fundamental reason of structural evolution in terms of material nucleation and interfacial structure is given. © to the authors 2009.
spellingShingle Paladugu, M
Zou, J
Guo, Y
Zhang, X
Joyce, H
Gao, Q
Tan, H
Jagadish, C
Kim, Y
Evolution of wurtzite structured GaAs shells around InAs nanowire cores
title Evolution of wurtzite structured GaAs shells around InAs nanowire cores
title_full Evolution of wurtzite structured GaAs shells around InAs nanowire cores
title_fullStr Evolution of wurtzite structured GaAs shells around InAs nanowire cores
title_full_unstemmed Evolution of wurtzite structured GaAs shells around InAs nanowire cores
title_short Evolution of wurtzite structured GaAs shells around InAs nanowire cores
title_sort evolution of wurtzite structured gaas shells around inas nanowire cores
work_keys_str_mv AT paladugum evolutionofwurtzitestructuredgaasshellsaroundinasnanowirecores
AT zouj evolutionofwurtzitestructuredgaasshellsaroundinasnanowirecores
AT guoy evolutionofwurtzitestructuredgaasshellsaroundinasnanowirecores
AT zhangx evolutionofwurtzitestructuredgaasshellsaroundinasnanowirecores
AT joyceh evolutionofwurtzitestructuredgaasshellsaroundinasnanowirecores
AT gaoq evolutionofwurtzitestructuredgaasshellsaroundinasnanowirecores
AT tanh evolutionofwurtzitestructuredgaasshellsaroundinasnanowirecores
AT jagadishc evolutionofwurtzitestructuredgaasshellsaroundinasnanowirecores
AT kimy evolutionofwurtzitestructuredgaasshellsaroundinasnanowirecores