OBSERVATION OF INTERFACIAL PLASMONS ON MBE-GROWN GAAS BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY
Plasmons at the interface between heavily-doped MBE grown n-type GaAs (n ≅ 4 × 1018 cm-3) and a surface depletion layer about 200 Å thick have been observed by HREELS. The variation of the plasmon frequency and intensity with exciting beam energy are discussed within the framework of a simple two la...
| Autors principals: | , , , , , |
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| Format: | Journal article |
| Idioma: | English |
| Publicat: |
1986
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