OBSERVATION OF INTERFACIAL PLASMONS ON MBE-GROWN GAAS BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY

OBSERVATION OF INTERFACIAL PLASMONS ON MBE-GROWN GAAS BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY

Plasmons at the interface between heavily-doped MBE grown n-type GaAs (n ≅ 4 × 1018 cm-3) and a surface depletion layer about 200 Å thick have been observed by HREELS. The variation of the plasmon frequency and intensity with exciting beam energy are discussed within the framework of a simple two la...

Descripció completa

Dades bibliogràfiques
Autors principals:	Graygrychowski, Z, Stradling, R, Egdell, R, Dobson, P, Joyce, B, Woodbridge, K
Format:	Journal article
Idioma:	English
Publicat:	1986

Ítems similars

APPLICATION OF HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY TO MBE GROWN GAAS(100)
per: Graygrychowski, Z, et al.
Publicat: (1987)

APPLICATION OF HREELS TO MBE-GROWN III-V-MATERIALS
per: Graygrychowski, Z, et al.
Publicat: (1987)

Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
per: RussellHarriott, J, et al.
Publicat: (1996)

A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE
per: Ming Rong Lee, et al.
Publicat: (2001-01-01)

SURFACE AND INTERFACE PHONON AND PLASMON EXCITATIONS IN III-V SEMICONDUCTOR-MATERIALS
per: Egdell, R, et al.
Publicat: (1987)

Performance evaluation of a new 30 μm thick GaAs x-ray detector grown by MBE
per: G Lioliou, et al.
Publicat: (2021-01-01)

Numerical Analysis of Dark Currents in T2SL nBn Detector Grown by MBE on GaAs Substrate
per: Małgorzata Kopytko, et al.
Publicat: (2019-10-01)

Spectroscopic Ellipsometry Analysis of Rapid Thermal Annealing Effect on MBE Grown GaAs1−x−Nx
per: Nebiha Ben Sedrine, et al.
Publicat: (2023-06-01)

MBE growth and investigation of (001) GaAs surfaces using SIMS
per: Croydon, W. F.
Publicat: (1985)

Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE
per: Henini Mohamed, et al.
Publicat: (2011-01-01)

Dirac’s HdCdTe semimetals grown by MBE technology
per: Grendysa Jakub, et al.
Publicat: (2017-01-01)

Terahertz waveguide spectroscopy of two-dimensional plasmons in GaAs
per: Harris, C. Thomas (Charles Thomas)
Publicat: (2011)

The Study of Adsorption on Metal Oxides by High-Resolution Electron-Energy-Loss Spectroscopy
per: Egdell, R
Publicat: (1985)

Below-bandgap photoluminescence from GaAs substrates induced by pre-MBE-growth treatments
per: Ronel Christian Roca, et al.
Publicat: (2019-07-01)

X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi2Se3 thin films
per: L. J. Collins-McIntyre, et al.
Publicat: (2014-12-01)

Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE
per: Li, Chaoyong.
Publicat: (2009)

The effect of substrate misorientation on atomic ordering in Ga0.52In0.48P epilayers grown on GaAs(001) substrates by gas-source MBE
per: Meenakarn, C, et al.
Publicat: (1997)

ENERGY RELAXATION MECHANISMS IN N-TYPE GAAS FROM MAGNETOPHONON SPECTROSCOPY
per: Nicholas, R, et al.
Publicat: (1976)

TIME-RESOLVED AND CW OPTICAL STUDIES OF MBE-GROWN ZNTE/GASB EPILAYERS
per: Mcnamee, M, et al.
Publicat: (1994)

Factors affecting the shape of MBE-grown laterally aligned Fe nanowires
per: Lok, Shu K., et al.
Publicat: (2013)

A STUDY OF THE SODIUM TUNGSTEN BRONZES BY HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY
per: Egdell, R, et al.
Publicat: (1982)

TIME-RESOLVED STUDIES OF HOT CARRIERS AND EXCITONS IN MBE-GROWN ZNTE GASB EPILAYERS
per: Mcnamee, M, et al.
Publicat: (1994)

Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates
per: Wang Lu, et al.
Publicat: (2009-01-01)

RF-MBE Grown III-Nitrides Heterostructures For Hydrogen Gas Sensing Applications
per: CHIN, CHE WOEI
Publicat: (2017)

The effects of silicon doping on the structural and electrical properties of III-nitrides grown by MBE
per: Chakraborti Sudipta
Publicat: (2017)

MBE-grown tetragonal FeTe consisting of c-axis-aligned nanocrystals
per: Zhihao He, et al.
Publicat: (2024-03-01)

Temperature-Dependent X-ray Diffraction Measurements of Infrared Superlattices Grown by MBE
per: Charles J. Reyner, et al.
Publicat: (2016-11-01)

Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE
per: Aho Arto, et al.
Publicat: (2017-01-01)

High Performance Planar Antimony-Based Superlattice Photodetectors Using Zinc Diffusion Grown by MBE
per: Jiakai Li, et al.
Publicat: (2022-09-01)

MBE-grown long wavelength InGaAlAs/InP laser diodes
per: Choi, Woo-Young
Publicat: (2006)

XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires
per: Olga Yu. Koval, et al.
Publicat: (2021-04-01)

Investigation of MBE grown high Al concentration AlGaN ohmic contact
per: Yaqin Wang, et al.
Publicat: (2024-05-01)

Y-89 NMR studies of MBE grown DyFe2/YFe2 multilayer films
per: Bowden, G, et al.
Publicat: (2001)

Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers
per: Karol Olszewski, et al.
Publicat: (2023-09-01)

Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates
per: Shafi M, et al.
Publicat: (2010-01-01)

Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE
per: Yip, Kim Hong.
Publicat: (2008)

Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE
per: Chia-Hsing Wu, et al.
Publicat: (2022-07-01)

The Effect of Substrate Crystal Orientations on Surface Properties of SiC Thin Layer Grown by MBE
per: Akira KAKUTA, et al.
Publicat: (2008-08-01)

Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides
per: Ke Chen, et al.
Publicat: (2018-05-01)

Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE
per: N.A. Al-Ahmadi, et al.
Publicat: (2016-01-01)