OBSERVATION OF INTERFACIAL PLASMONS ON MBE-GROWN GAAS BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY

OBSERVATION OF INTERFACIAL PLASMONS ON MBE-GROWN GAAS BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY

Plasmons at the interface between heavily-doped MBE grown n-type GaAs (n ≅ 4 × 1018 cm-3) and a surface depletion layer about 200 Å thick have been observed by HREELS. The variation of the plasmon frequency and intensity with exciting beam energy are discussed within the framework of a simple two la...

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Những tác giả chính:	Graygrychowski, Z, Stradling, R, Egdell, R, Dobson, P, Joyce, B, Woodbridge, K
Định dạng:	Journal article
Ngôn ngữ:	English
Được phát hành:	1986

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