PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
Main Authors: | Warburton, R, Beales, T, Mason, N, Nicholas, R, Walker, P |
---|---|
Format: | Journal article |
Published: |
1991
|
Similar Items
-
GASB HETEROSTRUCTURES GROWN BY MOVPE
by: Chidley, E, et al.
Published: (1988) -
ABSORPTION CHARACTERISTICS OF GASB/INAS AND INSB/INAS SLSS GROWN ON (111) GAAS BY MOVPE
by: Lakrimi, M, et al.
Published: (1991) -
OPTIMIZATION OF THE GROWTH BY MOVPE OF STRAINED GASB/INAS DOUBLE HETEROJUNCTIONS AND SUPERLATTICES ON [111] GAAS SUBSTRATES
by: Lakrimi, M, et al.
Published: (1992) -
Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
by: Maxim A. Ladugin, et al.
Published: (2019-06-01) -
GAAS/GASB STRAINED-LAYER HETEROSTRUCTURES DEPOSITED BY METALORGANIC VAPOR-PHASE EPITAXY
by: Chidley, E, et al.
Published: (1989)