PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES

Podobne zapisy

• GASB HETEROSTRUCTURES GROWN BY MOVPE
  od: Chidley, E, i wsp.
  Wydane: (1988)
• ABSORPTION CHARACTERISTICS OF GASB/INAS AND INSB/INAS SLSS GROWN ON (111) GAAS BY MOVPE
  od: Lakrimi, M, i wsp.
  Wydane: (1991)
• OPTIMIZATION OF THE GROWTH BY MOVPE OF STRAINED GASB/INAS DOUBLE HETEROJUNCTIONS AND SUPERLATTICES ON [111] GAAS SUBSTRATES
  od: Lakrimi, M, i wsp.
  Wydane: (1992)
• Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
  od: Maxim A. Ladugin, i wsp.
  Wydane: (2019-06-01)
• GAAS/GASB STRAINED-LAYER HETEROSTRUCTURES DEPOSITED BY METALORGANIC VAPOR-PHASE EPITAXY
  od: Chidley, E, i wsp.
  Wydane: (1989)