Partial dislocations in graphene and their atomic level migration dynamics.
We demonstrate the formation of partial dislocations in graphene at elevated temperatures of ≥500 °C with single atom resolution aberration corrected transmission electron microscopy. The partial dislocations spatially redistribute strain in the lattice, providing an energetically more favorable con...
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Bibliographic Details
| Main Authors: |
Robertson, A,
Lee, G,
He, K,
Fan, Y,
Allen, C,
Lee, S,
Kim, H,
Yoon, E,
Zheng, H,
Kirkland, A,
Warner, J |
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| Format: | Journal article
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| Language: | English |
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| Published: |
American Chemical Society
2015
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