Partial dislocations in graphene and their atomic level migration dynamics.
We demonstrate the formation of partial dislocations in graphene at elevated temperatures of ≥500 °C with single atom resolution aberration corrected transmission electron microscopy. The partial dislocations spatially redistribute strain in the lattice, providing an energetically more favorable con...
| Main Authors: | , , , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
American Chemical Society
2015
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| _version_ | 1826263896909938688 |
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| author | Robertson, A Lee, G He, K Fan, Y Allen, C Lee, S Kim, H Yoon, E Zheng, H Kirkland, A Warner, J |
| author_facet | Robertson, A Lee, G He, K Fan, Y Allen, C Lee, S Kim, H Yoon, E Zheng, H Kirkland, A Warner, J |
| author_sort | Robertson, A |
| collection | OXFORD |
| description | We demonstrate the formation of partial dislocations in graphene at elevated temperatures of ≥500 °C with single atom resolution aberration corrected transmission electron microscopy. The partial dislocations spatially redistribute strain in the lattice, providing an energetically more favorable configuration to the perfect dislocation. Low-energy migration paths mediated by partial dislocation formation have been observed, providing insights into the atomistic dynamics of graphene during annealing. These results are important for understanding the high temperature plasticity of graphene and partial dislocation behavior in related crystal systems, such as diamond cubic materials. |
| first_indexed | 2024-03-06T19:59:10Z |
| format | Journal article |
| id | oxford-uuid:26ae2f18-20df-42f5-826f-77babba5f698 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T19:59:10Z |
| publishDate | 2015 |
| publisher | American Chemical Society |
| record_format | dspace |
| spelling | oxford-uuid:26ae2f18-20df-42f5-826f-77babba5f6982022-03-26T12:02:22ZPartial dislocations in graphene and their atomic level migration dynamics.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:26ae2f18-20df-42f5-826f-77babba5f698EnglishSymplectic Elements at OxfordAmerican Chemical Society2015Robertson, ALee, GHe, KFan, YAllen, CLee, SKim, HYoon, EZheng, HKirkland, AWarner, JWe demonstrate the formation of partial dislocations in graphene at elevated temperatures of ≥500 °C with single atom resolution aberration corrected transmission electron microscopy. The partial dislocations spatially redistribute strain in the lattice, providing an energetically more favorable configuration to the perfect dislocation. Low-energy migration paths mediated by partial dislocation formation have been observed, providing insights into the atomistic dynamics of graphene during annealing. These results are important for understanding the high temperature plasticity of graphene and partial dislocation behavior in related crystal systems, such as diamond cubic materials. |
| spellingShingle | Robertson, A Lee, G He, K Fan, Y Allen, C Lee, S Kim, H Yoon, E Zheng, H Kirkland, A Warner, J Partial dislocations in graphene and their atomic level migration dynamics. |
| title | Partial dislocations in graphene and their atomic level migration dynamics. |
| title_full | Partial dislocations in graphene and their atomic level migration dynamics. |
| title_fullStr | Partial dislocations in graphene and their atomic level migration dynamics. |
| title_full_unstemmed | Partial dislocations in graphene and their atomic level migration dynamics. |
| title_short | Partial dislocations in graphene and their atomic level migration dynamics. |
| title_sort | partial dislocations in graphene and their atomic level migration dynamics |
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