Partial dislocations in graphene and their atomic level migration dynamics.
We demonstrate the formation of partial dislocations in graphene at elevated temperatures of ≥500 °C with single atom resolution aberration corrected transmission electron microscopy. The partial dislocations spatially redistribute strain in the lattice, providing an energetically more favorable con...
| Autores principales: | , , , , , , , , , , |
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| Formato: | Journal article |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2015
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