Polymer transistor performance monitored by terahertz spectroscopy
Research on polymer-based transistors is leading to the development of flexible, printable circuitry, which will be extremely cost effective to manufacture. However, the longterm performance of state-of-the-art polymer field effect transistors (pFETs) is limited by device degradation. We show that t...
| Main Authors: | , , , , , |
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| Format: | Conference item |
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2006
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| _version_ | 1797059110546440192 |
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| author | Lloyd-Hughes, J Richards, T Castro-Camus, E Sirringhaus, H Herz, L Johnston, M |
| author_facet | Lloyd-Hughes, J Richards, T Castro-Camus, E Sirringhaus, H Herz, L Johnston, M |
| author_sort | Lloyd-Hughes, J |
| collection | OXFORD |
| description | Research on polymer-based transistors is leading to the development of flexible, printable circuitry, which will be extremely cost effective to manufacture. However, the longterm performance of state-of-the-art polymer field effect transistors (pFETs) is limited by device degradation. We show that terahertz spectroscopy is an ideal tool to probe polymer device performance. Specifically we have monitored charge carrier trapping at the polymer-insulator boundary of a pFET. From these results we show that device degradation is primarily caused by a trapping of holes in the channel of the pFET, rather than by a change in hole mobility. |
| first_indexed | 2024-03-06T19:59:33Z |
| format | Conference item |
| id | oxford-uuid:26cb9b74-09a8-4526-8949-d96c5e04c3d2 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T19:59:33Z |
| publishDate | 2006 |
| record_format | dspace |
| spelling | oxford-uuid:26cb9b74-09a8-4526-8949-d96c5e04c3d22022-03-26T12:03:10ZPolymer transistor performance monitored by terahertz spectroscopyConference itemhttp://purl.org/coar/resource_type/c_5794uuid:26cb9b74-09a8-4526-8949-d96c5e04c3d2Symplectic Elements at Oxford2006Lloyd-Hughes, JRichards, TCastro-Camus, ESirringhaus, HHerz, LJohnston, MResearch on polymer-based transistors is leading to the development of flexible, printable circuitry, which will be extremely cost effective to manufacture. However, the longterm performance of state-of-the-art polymer field effect transistors (pFETs) is limited by device degradation. We show that terahertz spectroscopy is an ideal tool to probe polymer device performance. Specifically we have monitored charge carrier trapping at the polymer-insulator boundary of a pFET. From these results we show that device degradation is primarily caused by a trapping of holes in the channel of the pFET, rather than by a change in hole mobility. |
| spellingShingle | Lloyd-Hughes, J Richards, T Castro-Camus, E Sirringhaus, H Herz, L Johnston, M Polymer transistor performance monitored by terahertz spectroscopy |
| title | Polymer transistor performance monitored by terahertz spectroscopy |
| title_full | Polymer transistor performance monitored by terahertz spectroscopy |
| title_fullStr | Polymer transistor performance monitored by terahertz spectroscopy |
| title_full_unstemmed | Polymer transistor performance monitored by terahertz spectroscopy |
| title_short | Polymer transistor performance monitored by terahertz spectroscopy |
| title_sort | polymer transistor performance monitored by terahertz spectroscopy |
| work_keys_str_mv | AT lloydhughesj polymertransistorperformancemonitoredbyterahertzspectroscopy AT richardst polymertransistorperformancemonitoredbyterahertzspectroscopy AT castrocamuse polymertransistorperformancemonitoredbyterahertzspectroscopy AT sirringhaush polymertransistorperformancemonitoredbyterahertzspectroscopy AT herzl polymertransistorperformancemonitoredbyterahertzspectroscopy AT johnstonm polymertransistorperformancemonitoredbyterahertzspectroscopy |