RESONANT RAMAN-SCATTERING FROM CONFINED PHONONS AND INTERFACE PHONONS IN A GAAS/GAALAS SUPERLATTICE

We have studied the optic phonons of a GaAs/GaAlAs superlattice (d//G//a//A//s equals 55 Angstrom, d//G//a//A//l//A//s equals 175 Angstrom using resonance Raman spectroscopy. Resonance was obtained with the n equals 2 electron - heavy - hole excition of the GaAs quantum well, and with a bound excito...

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Hlavní autoři: Maciel, A, Cruz, L, Ryan, J
Médium: Journal article
Jazyk:English
Vydáno: 1987
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author Maciel, A
Cruz, L
Ryan, J
author_facet Maciel, A
Cruz, L
Ryan, J
author_sort Maciel, A
collection OXFORD
description We have studied the optic phonons of a GaAs/GaAlAs superlattice (d//G//a//A//s equals 55 Angstrom, d//G//a//A//l//A//s equals 175 Angstrom using resonance Raman spectroscopy. Resonance was obtained with the n equals 2 electron - heavy - hole excition of the GaAs quantum well, and with a bound exciton of the GaAlAs layers. We have observed several optic modes that are confined to the GaAs layers, whose energies agree well with neutron scattering measurements of bulk GaAs phonon dispersion. In this sample there is no clear evidence for modes confined to the GaAlAs layers. We have also observed in the region of the AlAs-like modes of the GaAlAs layers and additional broad band intermediate in energy between the LO and TO modes. This scattering is found to be resonant with both the GaAs and GaAlAs electronic states, and its shape is consistent with model predictions for interface phonons.
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spelling oxford-uuid:26dee505-6198-4118-8934-53d89e1bab042022-03-26T12:03:35ZRESONANT RAMAN-SCATTERING FROM CONFINED PHONONS AND INTERFACE PHONONS IN A GAAS/GAALAS SUPERLATTICEJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:26dee505-6198-4118-8934-53d89e1bab04EnglishSymplectic Elements at Oxford1987Maciel, ACruz, LRyan, JWe have studied the optic phonons of a GaAs/GaAlAs superlattice (d//G//a//A//s equals 55 Angstrom, d//G//a//A//l//A//s equals 175 Angstrom using resonance Raman spectroscopy. Resonance was obtained with the n equals 2 electron - heavy - hole excition of the GaAs quantum well, and with a bound exciton of the GaAlAs layers. We have observed several optic modes that are confined to the GaAs layers, whose energies agree well with neutron scattering measurements of bulk GaAs phonon dispersion. In this sample there is no clear evidence for modes confined to the GaAlAs layers. We have also observed in the region of the AlAs-like modes of the GaAlAs layers and additional broad band intermediate in energy between the LO and TO modes. This scattering is found to be resonant with both the GaAs and GaAlAs electronic states, and its shape is consistent with model predictions for interface phonons.
spellingShingle Maciel, A
Cruz, L
Ryan, J
RESONANT RAMAN-SCATTERING FROM CONFINED PHONONS AND INTERFACE PHONONS IN A GAAS/GAALAS SUPERLATTICE
title RESONANT RAMAN-SCATTERING FROM CONFINED PHONONS AND INTERFACE PHONONS IN A GAAS/GAALAS SUPERLATTICE
title_full RESONANT RAMAN-SCATTERING FROM CONFINED PHONONS AND INTERFACE PHONONS IN A GAAS/GAALAS SUPERLATTICE
title_fullStr RESONANT RAMAN-SCATTERING FROM CONFINED PHONONS AND INTERFACE PHONONS IN A GAAS/GAALAS SUPERLATTICE
title_full_unstemmed RESONANT RAMAN-SCATTERING FROM CONFINED PHONONS AND INTERFACE PHONONS IN A GAAS/GAALAS SUPERLATTICE
title_short RESONANT RAMAN-SCATTERING FROM CONFINED PHONONS AND INTERFACE PHONONS IN A GAAS/GAALAS SUPERLATTICE
title_sort resonant raman scattering from confined phonons and interface phonons in a gaas gaalas superlattice
work_keys_str_mv AT maciela resonantramanscatteringfromconfinedphononsandinterfacephononsinagaasgaalassuperlattice
AT cruzl resonantramanscatteringfromconfinedphononsandinterfacephononsinagaasgaalassuperlattice
AT ryanj resonantramanscatteringfromconfinedphononsandinterfacephononsinagaasgaalassuperlattice