Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.

We have performed a comparative study of ultrafast charge carrier dynamics in a range of III-V nanowires using optical pump-terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination ve...

Bibliográfalaš dieđut
Váldodahkkit:	Joyce, H, Docherty, C, Gao, Q, Tan, H, Jagadish, C, Lloyd-Hughes, J, Herz, L, Johnston, M
Materiálatiipa:	Journal article
Giella:	English
Almmustuhtton:	2013

Geahča maid

Transient terahertz conductivity of GaAs nanowires
Dahkki: Parkinson, P, et al.
Almmustuhtton: (2007)

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
Dahkki: Paladugu, M, et al.
Almmustuhtton: (2008)

Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.
Dahkki: Joyce, H, et al.
Almmustuhtton: (2012)

Growth of straight InAs-on-GaAs nanowire heterostructures
Dahkki: Messing, M, et al.
Almmustuhtton: (2011)

Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications
Dahkki: Joyce, H, et al.
Almmustuhtton: (2011)

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
Dahkki: Joyce, H, et al.
Almmustuhtton: (2011)

Understanding the kink formation in GaAs/InAs heterostructural nanowires
Dahkki: Paladugu, M, et al.
Almmustuhtton: (2006)

Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures.
Dahkki: Paladugu, M, et al.
Almmustuhtton: (2009)

Evolution of epitaxial InAs nanowires on GaAs 111B.
Dahkki: Zhang, X, et al.
Almmustuhtton: (2009)

The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires
Dahkki: Joyce, H, et al.
Almmustuhtton: (2017)

Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
Dahkki: Paladugu, M, et al.
Almmustuhtton: (2008)

Optical properties of single InP and GaAs nanowire heterostructures
Dahkki: Jackson, H, et al.
Almmustuhtton: (2008)

Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.
Dahkki: Paladugu, M, et al.
Almmustuhtton: (2007)

Evolution of wurtzite structured GaAs shells around InAs nanowire cores
Dahkki: Paladugu, M, et al.
Almmustuhtton: (2009)

Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires.
Dahkki: Joyce, H, et al.
Almmustuhtton: (2014)

Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
Dahkki: Kim Y, et al.
Almmustuhtton: (2009-01-01)

Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy
Dahkki: Joyce, H, et al.
Almmustuhtton: (2013)

Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures
Dahkki: Paladugu, M, et al.
Almmustuhtton: (2009)

Growth, structural and optical properties of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostruetures
Dahkki: Joyce, H, et al.
Almmustuhtton: (2007)

Strong carrier lifetime enhancement in GaAs nanowires coated with semiconducting polymer.
Dahkki: Yong, C, et al.
Almmustuhtton: (2012)

Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy
Dahkki: Joyce, H, et al.
Almmustuhtton: (2013)

An ion-implanted InP receiver for polarization resolved terahertz spectroscopy.
Dahkki: Castro-Camus, E, et al.
Almmustuhtton: (2007)

Improved Performance of GaAs-based Terahertz Emitters
Dahkki: Headley, C, et al.
Almmustuhtton: (2010)

Self-healing of fractured GaAs nanowires.
Dahkki: Wang, Y, et al.
Almmustuhtton: (2011)

EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES
Dahkki: D. A. Yatsyna, et al.
Almmustuhtton: (2019-06-01)

Direct observation of charge-carrier heating at WZ-ZB InP nanowire heterojunctions.
Dahkki: Yong, C, et al.
Almmustuhtton: (2013)

Evolution of InAs branches in InAsGaAs nanowire heterostructures
Dahkki: Paladugu, M, et al.
Almmustuhtton: (2007)

Understanding the true shape of Au-catalyzed GaAs nanowires.
Dahkki: Jiang, N, et al.
Almmustuhtton: (2014)

Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs
Dahkki: Lloyd-Hughes, J, et al.
Almmustuhtton: (2006)

Growth mechanism of truncated triangular GaAs nanowires
Dahkki: Zou, J, et al.
Almmustuhtton: (2006)

Super deformability and Young's modulus of GaAs nanowires.
Dahkki: Wang, Y, et al.
Almmustuhtton: (2011)

Conductivity of nanoporous InP membranes investigated using terahertz spectroscopy
Dahkki: Merchant, S, et al.
Almmustuhtton: (2007)

Conductivity of nanoporous InP membranes investigated using terahertz spectroscopy
Dahkki: Merchant, S, et al.
Almmustuhtton: (2008)

Conductivity of nanoporous InP membranes investigated using terahertz spectroscopy.
Dahkki: Merchant, S, et al.
Almmustuhtton: (2008)

Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission
Dahkki: Lloyd-Hughes, J, et al.
Almmustuhtton: (2004)

Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission
Dahkki: Lloyd-Hughes, J, et al.
Almmustuhtton: (2004)

Optimised two-temperature growth of GaAs nanowire s by metalorganic chemical vapour deposition
Dahkki: Joyce, H, et al.
Almmustuhtton: (2006)

Conductivity of nanoporous InP membranes investigated using terahertz spectroscopy
Dahkki: Merchant, S, et al.
Almmustuhtton: (2007)

Vertically standing Ge nanowires on GaAs(110) substrates
Dahkki: Song, MS, et al.
Almmustuhtton: (2008)

Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors
Dahkki: Peng, K, et al.
Almmustuhtton: (2016)