ENHANCED CARRIER DENSITIES AND DEVICE PERFORMANCE IN PIEZOELECTRIC PSEUDOMORPHIC HIGH-ELECTRON MOBILITY TRANSISTOR STRUCTURES
Main Authors: | Sanchezdehesa, J, Sanchezrojas, J, Lopez, C, Nicholas, R |
---|---|
Format: | Journal article |
Published: |
1992
|
Similar Items
-
Fabrication and characterization of AlGaAs/GaAs pseudomorphic high electron mobility transistors for power applications
by: Tan, Chee Leong
Published: (2008) -
Effect of varying gate-drain distance on the RF power performance of pseudomorphic high electron mobility transistors
by: Wong, Melinda F
Published: (2006) -
Fabrication and characterization of AlGaAs/InGaAs-based pseudomorphic high electron mobility transistors (pHEMTs)
by: Lee, Hou Jang.
Published: (2009) -
Pseudomorphic linearity
by: Tan, Yi Tong
Published: (2014) -
PSEUDOMORPHISM IN ULTRATHIN METAL-FILMS
by: Smith, G
Published: (1973)