Atom probe tomography of a cu-doped TiNiSn thermoelectric material: nanoscale structure and optimisation of analysis conditions
Cu-doping and crystallographic site occupations within the half-Heusler TiNiSn, a promising thermoelectric material, have been examined by Atom Probe Tomography (APT). In particular, this investigation aims to better understand the influence of atom probe analysis conditions on the measured chemical...
| Hlavní autoři: | , , , , , , , |
|---|---|
| Médium: | Journal article |
| Jazyk: | English |
| Vydáno: |
Cambridge University Press
2021
|
| _version_ | 1826308130694234112 |
|---|---|
| author | Henry, H Halpin, J Popuri, S Daly, L Bos, J-W Moody, M MacLaren, D Bagot, PAG |
| author_facet | Henry, H Halpin, J Popuri, S Daly, L Bos, J-W Moody, M MacLaren, D Bagot, PAG |
| author_sort | Henry, H |
| collection | OXFORD |
| description | Cu-doping and crystallographic site occupations within the half-Heusler TiNiSn, a promising
thermoelectric material, have been examined by Atom Probe Tomography (APT). In
particular, this investigation aims to better understand the influence of atom probe
analysis conditions on the measured chemical composition. Under voltage pulsing mode,
atomic planes are clearly resolved and suggest an arrangement of elements in-line within
the expected half-Heusler (F-43m space group) crystal structure. The Cu dopant is also
distributed uniformly throughout the bulk material. For operation under laser-pulsed
modes, the returned composition is highly dependent on the selected laser energy, with
high energies resulting in the measurement of excessively high absolute Ti counts at the
expense of Sn and in particular Ni. High laser energies also appear to be correlated with
the detection of a high fraction of partial hits, indicating non-ideal evaporation behaviour.
The possible mechanisms for these trends are discussed, along with suggestions for
optimal analysis conditions for these and similar thermoelectric materials. |
| first_indexed | 2024-03-07T07:13:27Z |
| format | Journal article |
| id | oxford-uuid:2982d608-0d15-4ca2-85c8-d41e9ddf6f59 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T07:13:27Z |
| publishDate | 2021 |
| publisher | Cambridge University Press |
| record_format | dspace |
| spelling | oxford-uuid:2982d608-0d15-4ca2-85c8-d41e9ddf6f592022-07-28T08:37:13ZAtom probe tomography of a cu-doped TiNiSn thermoelectric material: nanoscale structure and optimisation of analysis conditionsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:2982d608-0d15-4ca2-85c8-d41e9ddf6f59EnglishSymplectic ElementsCambridge University Press2021Henry, HHalpin, JPopuri, SDaly, LBos, J-WMoody, MMacLaren, DBagot, PAGCu-doping and crystallographic site occupations within the half-Heusler TiNiSn, a promising thermoelectric material, have been examined by Atom Probe Tomography (APT). In particular, this investigation aims to better understand the influence of atom probe analysis conditions on the measured chemical composition. Under voltage pulsing mode, atomic planes are clearly resolved and suggest an arrangement of elements in-line within the expected half-Heusler (F-43m space group) crystal structure. The Cu dopant is also distributed uniformly throughout the bulk material. For operation under laser-pulsed modes, the returned composition is highly dependent on the selected laser energy, with high energies resulting in the measurement of excessively high absolute Ti counts at the expense of Sn and in particular Ni. High laser energies also appear to be correlated with the detection of a high fraction of partial hits, indicating non-ideal evaporation behaviour. The possible mechanisms for these trends are discussed, along with suggestions for optimal analysis conditions for these and similar thermoelectric materials. |
| spellingShingle | Henry, H Halpin, J Popuri, S Daly, L Bos, J-W Moody, M MacLaren, D Bagot, PAG Atom probe tomography of a cu-doped TiNiSn thermoelectric material: nanoscale structure and optimisation of analysis conditions |
| title | Atom probe tomography of a cu-doped TiNiSn thermoelectric material: nanoscale structure and optimisation of analysis conditions |
| title_full | Atom probe tomography of a cu-doped TiNiSn thermoelectric material: nanoscale structure and optimisation of analysis conditions |
| title_fullStr | Atom probe tomography of a cu-doped TiNiSn thermoelectric material: nanoscale structure and optimisation of analysis conditions |
| title_full_unstemmed | Atom probe tomography of a cu-doped TiNiSn thermoelectric material: nanoscale structure and optimisation of analysis conditions |
| title_short | Atom probe tomography of a cu-doped TiNiSn thermoelectric material: nanoscale structure and optimisation of analysis conditions |
| title_sort | atom probe tomography of a cu doped tinisn thermoelectric material nanoscale structure and optimisation of analysis conditions |
| work_keys_str_mv | AT henryh atomprobetomographyofacudopedtinisnthermoelectricmaterialnanoscalestructureandoptimisationofanalysisconditions AT halpinj atomprobetomographyofacudopedtinisnthermoelectricmaterialnanoscalestructureandoptimisationofanalysisconditions AT popuris atomprobetomographyofacudopedtinisnthermoelectricmaterialnanoscalestructureandoptimisationofanalysisconditions AT dalyl atomprobetomographyofacudopedtinisnthermoelectricmaterialnanoscalestructureandoptimisationofanalysisconditions AT bosjw atomprobetomographyofacudopedtinisnthermoelectricmaterialnanoscalestructureandoptimisationofanalysisconditions AT moodym atomprobetomographyofacudopedtinisnthermoelectricmaterialnanoscalestructureandoptimisationofanalysisconditions AT maclarend atomprobetomographyofacudopedtinisnthermoelectricmaterialnanoscalestructureandoptimisationofanalysisconditions AT bagotpag atomprobetomographyofacudopedtinisnthermoelectricmaterialnanoscalestructureandoptimisationofanalysisconditions |