Atom probe tomography of a cu-doped TiNiSn thermoelectric material: nanoscale structure and optimisation of analysis conditions
Cu-doping and crystallographic site occupations within the half-Heusler TiNiSn, a promising thermoelectric material, have been examined by Atom Probe Tomography (APT). In particular, this investigation aims to better understand the influence of atom probe analysis conditions on the measured chemical...
Κύριοι συγγραφείς: | Henry, H, Halpin, J, Popuri, S, Daly, L, Bos, J-W, Moody, M, MacLaren, D, Bagot, PAG |
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Μορφή: | Journal article |
Γλώσσα: | English |
Έκδοση: |
Cambridge University Press
2021
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Παρόμοια τεκμήρια
Παρόμοια τεκμήρια
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