Atom probe tomography of a cu-doped TiNiSn thermoelectric material: nanoscale structure and optimisation of analysis conditions
Cu-doping and crystallographic site occupations within the half-Heusler TiNiSn, a promising thermoelectric material, have been examined by Atom Probe Tomography (APT). In particular, this investigation aims to better understand the influence of atom probe analysis conditions on the measured chemical...
المؤلفون الرئيسيون: | Henry, H, Halpin, J, Popuri, S, Daly, L, Bos, J-W, Moody, M, MacLaren, D, Bagot, PAG |
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التنسيق: | Journal article |
اللغة: | English |
منشور في: |
Cambridge University Press
2021
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مواد مشابهة
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