Atom probe tomography of a cu-doped TiNiSn thermoelectric material: nanoscale structure and optimisation of analysis conditions

Atom probe tomography of a cu-doped TiNiSn thermoelectric material: nanoscale structure and optimisation of analysis conditions

Cu-doping and crystallographic site occupations within the half-Heusler TiNiSn, a promising thermoelectric material, have been examined by Atom Probe Tomography (APT). In particular, this investigation aims to better understand the influence of atom probe analysis conditions on the measured chemical...

Повний опис

Бібліографічні деталі
Автори: Henry, H, Halpin, J, Popuri, S, Daly, L, Bos, J-W, Moody, M, MacLaren, D, Bagot, PAG
Формат: Journal article
Мова:English
Опубліковано: Cambridge University Press 2021

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