Atom probe tomography of a cu-doped TiNiSn thermoelectric material: nanoscale structure and optimisation of analysis conditions
Cu-doping and crystallographic site occupations within the half-Heusler TiNiSn, a promising thermoelectric material, have been examined by Atom Probe Tomography (APT). In particular, this investigation aims to better understand the influence of atom probe analysis conditions on the measured chemical...
| Những tác giả chính: | , , , , , , , |
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| Định dạng: | Journal article |
| Ngôn ngữ: | English |
| Được phát hành: |
Cambridge University Press
2021
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