Atom probe tomography of a cu-doped TiNiSn thermoelectric material: nanoscale structure and optimisation of analysis conditions

Cu-doping and crystallographic site occupations within the half-Heusler TiNiSn, a promising thermoelectric material, have been examined by Atom Probe Tomography (APT). In particular, this investigation aims to better understand the influence of atom probe analysis conditions on the measured chemical...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид: Henry, H, Halpin, J, Popuri, S, Daly, L, Bos, J-W, Moody, M, MacLaren, D, Bagot, PAG
Формат: Journal article
Хэл сонгох:English
Хэвлэсэн: Cambridge University Press 2021