Hall-effect mobility for a selection of natural and synthetic 2D semiconductor crystals
We present a DC-AC Hall-effect analysis on transition-metal-dichalcogenides comprising natural crystals of molybdenum disulfide and tungsten diselenide; and synthetic crystals of hafnium diselenide, molybdenum ditelluride, molybdenum diselenide and niobium-doped molybdenum disulfide. We observe a wi...
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Conference item |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers
2017
|
| _version_ | 1826264449926823936 |
|---|---|
| author | Monaghan, S Gity, F Duffy, R Mirabelli, G McCarthy, M Cherkaoui, K Povey, IM Nagle, RE Hurley, PK Lindemuth, JR Napolitani, E |
| author_facet | Monaghan, S Gity, F Duffy, R Mirabelli, G McCarthy, M Cherkaoui, K Povey, IM Nagle, RE Hurley, PK Lindemuth, JR Napolitani, E |
| author_sort | Monaghan, S |
| collection | OXFORD |
| description | We present a DC-AC Hall-effect analysis on transition-metal-dichalcogenides comprising natural crystals of molybdenum disulfide and tungsten diselenide; and synthetic crystals of hafnium diselenide, molybdenum ditelluride, molybdenum diselenide and niobium-doped molybdenum disulfide. We observe a wide range of Hall mobility and carrier concentration values with either a net electron or hole carrier type. The synthetic niobium-doped molybdenum disulfide crystal exhibits a net hole carrier type and a carrier concentration approximately two orders of magnitude higher than a non-intentionally doped natural molybdenum disulfide crystal, with an equivalent reduction in Hall mobility. This synthetic niobium-doped molybdenum disulfide crystal also shows a significantly reduced resistivity when compared to the other crystals. Secondary ion mass spectrometry shows higher counts of niobium in the intentionally-doped synthetic niobium-molybdenum disulfide crystal, in addition to various other high contamination counts in both the natural and synthetic molybdenum disulfide crystals, correlating well with the significant range of high resistivity observed. Compared to silicon, the resistivity in these contaminated TMD materials reduces less rapidly with increasing equivalent carrier concentration levels, and the resistivity is higher in magnitude by a factor of approximately 4-10 when compared to silicon, which in turn reduces the achievable Hall mobility by at least a similar factor. It is therefore suggested that more controlled growth methods of TMD materials which lead to significantly reduced contamination elements and levels, with improved stoichiometry, could potentially provide a significant increase in Hall mobility assuming no change in carrier properties. |
| first_indexed | 2024-03-06T20:07:59Z |
| format | Conference item |
| id | oxford-uuid:298d62e9-b809-4452-9f0b-29d18e85777b |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T20:07:59Z |
| publishDate | 2017 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | oxford-uuid:298d62e9-b809-4452-9f0b-29d18e85777b2022-03-26T12:19:51ZHall-effect mobility for a selection of natural and synthetic 2D semiconductor crystalsConference itemhttp://purl.org/coar/resource_type/c_5794uuid:298d62e9-b809-4452-9f0b-29d18e85777bEnglishSymplectic Elements Institute of Electrical and Electronics Engineers2017Monaghan, SGity, FDuffy, RMirabelli, GMcCarthy, MCherkaoui, KPovey, IMNagle, REHurley, PKLindemuth, JRNapolitani, EWe present a DC-AC Hall-effect analysis on transition-metal-dichalcogenides comprising natural crystals of molybdenum disulfide and tungsten diselenide; and synthetic crystals of hafnium diselenide, molybdenum ditelluride, molybdenum diselenide and niobium-doped molybdenum disulfide. We observe a wide range of Hall mobility and carrier concentration values with either a net electron or hole carrier type. The synthetic niobium-doped molybdenum disulfide crystal exhibits a net hole carrier type and a carrier concentration approximately two orders of magnitude higher than a non-intentionally doped natural molybdenum disulfide crystal, with an equivalent reduction in Hall mobility. This synthetic niobium-doped molybdenum disulfide crystal also shows a significantly reduced resistivity when compared to the other crystals. Secondary ion mass spectrometry shows higher counts of niobium in the intentionally-doped synthetic niobium-molybdenum disulfide crystal, in addition to various other high contamination counts in both the natural and synthetic molybdenum disulfide crystals, correlating well with the significant range of high resistivity observed. Compared to silicon, the resistivity in these contaminated TMD materials reduces less rapidly with increasing equivalent carrier concentration levels, and the resistivity is higher in magnitude by a factor of approximately 4-10 when compared to silicon, which in turn reduces the achievable Hall mobility by at least a similar factor. It is therefore suggested that more controlled growth methods of TMD materials which lead to significantly reduced contamination elements and levels, with improved stoichiometry, could potentially provide a significant increase in Hall mobility assuming no change in carrier properties. |
| spellingShingle | Monaghan, S Gity, F Duffy, R Mirabelli, G McCarthy, M Cherkaoui, K Povey, IM Nagle, RE Hurley, PK Lindemuth, JR Napolitani, E Hall-effect mobility for a selection of natural and synthetic 2D semiconductor crystals |
| title | Hall-effect mobility for a selection of natural and synthetic 2D semiconductor crystals |
| title_full | Hall-effect mobility for a selection of natural and synthetic 2D semiconductor crystals |
| title_fullStr | Hall-effect mobility for a selection of natural and synthetic 2D semiconductor crystals |
| title_full_unstemmed | Hall-effect mobility for a selection of natural and synthetic 2D semiconductor crystals |
| title_short | Hall-effect mobility for a selection of natural and synthetic 2D semiconductor crystals |
| title_sort | hall effect mobility for a selection of natural and synthetic 2d semiconductor crystals |
| work_keys_str_mv | AT monaghans halleffectmobilityforaselectionofnaturalandsynthetic2dsemiconductorcrystals AT gityf halleffectmobilityforaselectionofnaturalandsynthetic2dsemiconductorcrystals AT duffyr halleffectmobilityforaselectionofnaturalandsynthetic2dsemiconductorcrystals AT mirabellig halleffectmobilityforaselectionofnaturalandsynthetic2dsemiconductorcrystals AT mccarthym halleffectmobilityforaselectionofnaturalandsynthetic2dsemiconductorcrystals AT cherkaouik halleffectmobilityforaselectionofnaturalandsynthetic2dsemiconductorcrystals AT poveyim halleffectmobilityforaselectionofnaturalandsynthetic2dsemiconductorcrystals AT naglere halleffectmobilityforaselectionofnaturalandsynthetic2dsemiconductorcrystals AT hurleypk halleffectmobilityforaselectionofnaturalandsynthetic2dsemiconductorcrystals AT lindemuthjr halleffectmobilityforaselectionofnaturalandsynthetic2dsemiconductorcrystals AT napolitanie halleffectmobilityforaselectionofnaturalandsynthetic2dsemiconductorcrystals |