Anodisation of gridded silicon field emitter arrays
Field emission characterisation of gridded silicon FEAs was carried out before and after anodisation. Each sample contains ten gridded FEAs with array sizes varying from I to 10x10. For each sample, both current-voltage and current-time measurements of each FEA were carried out before and after arzo...
| Main Authors: | , , , , , |
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| Format: | Conference item |
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IEEE
1997
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| _version_ | 1826264545012744192 |
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| author | Huang, M Huq, SE Prewett, P Smith, G Wilshaw, P Korea, E |
| author_facet | Huang, M Huq, SE Prewett, P Smith, G Wilshaw, P Korea, E |
| author_sort | Huang, M |
| collection | OXFORD |
| description | Field emission characterisation of gridded silicon FEAs was carried out before and after anodisation. Each sample contains ten gridded FEAs with array sizes varying from I to 10x10. For each sample, both current-voltage and current-time measurements of each FEA were carried out before and after arzodisation. The morphology and thickness of the porous silicon layer on the emitters were controlled by the anodising current density and duration of the anodisation process. The emission uniformity of FEAs was evaluated by comparing the I-V curves from different FEAs, which show that the emission uniformity had been improved after anodisation. In addition, the I-t measurements show that the emission stability of FEAs is very sensitive to anodisation time, and it is essential to use a very short anodisation time (similar to 0.1 second) to obtain stable emission currents. Under these conditions no adverse effects of the anodisation process on emission stability have been found whilst the improvements in operating voltage and uniformity are maintained. |
| first_indexed | 2024-03-06T20:09:32Z |
| format | Conference item |
| id | oxford-uuid:2a16dc79-4e2e-4012-bcd6-e446c68dbddb |
| institution | University of Oxford |
| last_indexed | 2024-03-06T20:09:32Z |
| publishDate | 1997 |
| publisher | IEEE |
| record_format | dspace |
| spelling | oxford-uuid:2a16dc79-4e2e-4012-bcd6-e446c68dbddb2022-03-26T12:22:58ZAnodisation of gridded silicon field emitter arraysConference itemhttp://purl.org/coar/resource_type/c_5794uuid:2a16dc79-4e2e-4012-bcd6-e446c68dbddbSymplectic Elements at OxfordIEEE1997Huang, MHuq, SEPrewett, PSmith, GWilshaw, PKorea, EField emission characterisation of gridded silicon FEAs was carried out before and after anodisation. Each sample contains ten gridded FEAs with array sizes varying from I to 10x10. For each sample, both current-voltage and current-time measurements of each FEA were carried out before and after arzodisation. The morphology and thickness of the porous silicon layer on the emitters were controlled by the anodising current density and duration of the anodisation process. The emission uniformity of FEAs was evaluated by comparing the I-V curves from different FEAs, which show that the emission uniformity had been improved after anodisation. In addition, the I-t measurements show that the emission stability of FEAs is very sensitive to anodisation time, and it is essential to use a very short anodisation time (similar to 0.1 second) to obtain stable emission currents. Under these conditions no adverse effects of the anodisation process on emission stability have been found whilst the improvements in operating voltage and uniformity are maintained. |
| spellingShingle | Huang, M Huq, SE Prewett, P Smith, G Wilshaw, P Korea, E Anodisation of gridded silicon field emitter arrays |
| title | Anodisation of gridded silicon field emitter arrays |
| title_full | Anodisation of gridded silicon field emitter arrays |
| title_fullStr | Anodisation of gridded silicon field emitter arrays |
| title_full_unstemmed | Anodisation of gridded silicon field emitter arrays |
| title_short | Anodisation of gridded silicon field emitter arrays |
| title_sort | anodisation of gridded silicon field emitter arrays |
| work_keys_str_mv | AT huangm anodisationofgriddedsiliconfieldemitterarrays AT huqse anodisationofgriddedsiliconfieldemitterarrays AT prewettp anodisationofgriddedsiliconfieldemitterarrays AT smithg anodisationofgriddedsiliconfieldemitterarrays AT wilshawp anodisationofgriddedsiliconfieldemitterarrays AT koreae anodisationofgriddedsiliconfieldemitterarrays |