Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.

Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.

The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs core of GaAs/AlGaAs core-shell nanowires grown by metal-organic chemical vapor deposition are investigated. The carrier lifetime increases with increasing AlGaAs shell thickness up to a certain value a...

Fuld beskrivelse

Bibliografiske detaljer
Main Authors:	Jiang, N, Gao, Q, Parkinson, P, Wong-Leung, J, Mokkapati, S, Breuer, S, Tan, H, Zheng, C, Etheridge, J, Jagadish, C
Format:	Journal article
Sprog:	English
Udgivet:	2013

Lignende værker

Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires
af: Jiang, N, et al.
Udgivet: (2012)

Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1-xAs core-shell nanowires
af: Jiang, N, et al.
Udgivet: (2012)

Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
af: Kang, J, et al.
Udgivet: (2011)

Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures
af: Perera, S, et al.
Udgivet: (2008)

Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires
af: Titova, L, et al.
Udgivet: (2006)

Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowires.
af: Hoang, T, et al.
Udgivet: (2007)

Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires
af: Boland, J, et al.
Udgivet: (2017)

Modulation doping of GaAs/AlGaAs core-shell nanowires with effective defect passivation and high electron mobility
af: Boland, J, et al.
Udgivet: (2015)

High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD
af: Jiang, N, et al.
Udgivet: (2013)

Picosecond carrier lifetime measurements on a single GaAs Nanowire
af: Parkinson, P, et al.
Udgivet: (2012)

Improved GaAs nanowire solar cells using AlGaAs for surface passivation
af: Lee, Y, et al.
Udgivet: (2012)

Growth, structural and optical properties of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostruetures
af: Joyce, H, et al.
Udgivet: (2007)

Spatially-resolved photoluminescence imaging of CdS and GaAs/AlGaAs nanowires
af: Smith, L, et al.
Udgivet: (2007)

Evolution of wurtzite structured GaAs shells around InAs nanowire cores
af: Paladugu, M, et al.
Udgivet: (2009)

Controlled growth and doping of core-shell GaAs-based nanowires
af: Tambe, Michael Joseph
Udgivet: (2010)

Strong carrier lifetime enhancement in GaAs nanowires coated with semiconducting polymer.
af: Yong, C, et al.
Udgivet: (2012)

Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
af: Kang, J, et al.
Udgivet: (2010)

Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications
af: Lei, W, et al.
Udgivet: (2012)

Optoelectronic properties of GaAs nanowire photodetector
af: Wang, H, et al.
Udgivet: (2012)

Optically pumped room-temperature GaAs nanowire lasers
af: Saxena, D, et al.
Udgivet: (2013)

Distinguishing cap and core contributions to the photoconductive terahertz response of single GaAs based core–shell–cap nanowire detectors
af: Peng, K, et al.
Udgivet: (2018)

TEM study of compositional profile in AlGaAs/GaAs quantum wells
af: Zou, J, et al.
Udgivet: (1998)

Linearity of power AlGaAs/GaAs HBTs
af: Chatterjee, Ritwik, 1974-
Udgivet: (2009)

Increased photoconductivity lifetimes in GaAs nanowires via n-type and p-type shell doping
af: Boland, J, et al.
Udgivet: (2016)

Growth and characterization of GaAs1and#x2212;xSbx nanowires
af: Yuan, X, et al.
Udgivet: (2012)

Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures
af: Ryan, J, et al.
Udgivet: (1984)

Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells
af: Yuan, S, et al.
Udgivet: (1998)

Transient terahertz conductivity of GaAs nanowires
af: Parkinson, P, et al.
Udgivet: (2007)

GaAs/AlGaAs far-infrared quantum cascade laser
af: Callebaut, Hans, 1975-
Udgivet: (2009)

GaAs/AlGaAs mid-infrared quantum cascade laser
af: Williams, Benjamin S. (Benjamin Stanford), 1974-
Udgivet: (2009)

GaAs/AlAs/AlGaAs quantum well infrared photodetector
af: Fan, Weijun
Udgivet: (2008)

Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications
af: Joyce, H, et al.
Udgivet: (2011)

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
af: Joyce, H, et al.
Udgivet: (2011)

Femtosecond carrier dynamics in AlGaAs
af: Ulman, Morrison
Udgivet: (2005)

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
af: Paladugu, M, et al.
Udgivet: (2008)

Magneto-photoluminescence of GaAs/AlGaAs heterojunctions under hydrostatic pressure
af: Priest, A, et al.
Udgivet: (1998)

Photoluminescence of GaAs/AlGaAs heterojunctions in magnetic fields up to 50 T
af: Priest, A, et al.
Udgivet: (1998)

Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires
af: Zhao, Q, et al.
Udgivet: (2000)

Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires.
af: Parkinson, P, et al.
Udgivet: (2012)

Fabrication and characterisation of AlGaAs/GaAs heterojunction bipolar transistors (HBTs)
af: Wang, Hong
Udgivet: (2009)