Rapid surface oxidation as a source of surface degradation factor for Bi₂Se₃.

Bismuth selenide (Bi(2)Se(3)) is a topological insulator with metallic surface states (SS) residing in a large bulk bandgap. In experiments, synthesized Bi(2)Se(3) is often heavily n-type doped due to selenium vacancies. Furthermore, it is discovered from experiments on bulk single crystals that Bi(...

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Main Authors: Kong, D, Cha, J, Lai, K, Peng, H, Analytis, J, Meister, S, Chen, Y, Zhang, H, Fisher, I, Shen, Z, Cui, Y
Format: Journal article
Language:English
Published: 2011
_version_ 1826264740407541760
author Kong, D
Cha, J
Lai, K
Peng, H
Analytis, J
Meister, S
Chen, Y
Zhang, H
Fisher, I
Shen, Z
Cui, Y
author_facet Kong, D
Cha, J
Lai, K
Peng, H
Analytis, J
Meister, S
Chen, Y
Zhang, H
Fisher, I
Shen, Z
Cui, Y
author_sort Kong, D
collection OXFORD
description Bismuth selenide (Bi(2)Se(3)) is a topological insulator with metallic surface states (SS) residing in a large bulk bandgap. In experiments, synthesized Bi(2)Se(3) is often heavily n-type doped due to selenium vacancies. Furthermore, it is discovered from experiments on bulk single crystals that Bi(2)Se(3) gets additional n-type doping after exposure to the atmosphere, thereby reducing the relative contribution of SS in total conductivity. In this article, transport measurements on Bi(2)Se(3) nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi(2)Se(3) under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological SS. Appropriate surface passivation or encapsulation may be required to probe topological SS of Bi(2)Se(3) by transport measurements.
first_indexed 2024-03-06T20:12:42Z
format Journal article
id oxford-uuid:2b1afd83-9404-41c5-a3c9-04f3d6df6b02
institution University of Oxford
language English
last_indexed 2024-03-06T20:12:42Z
publishDate 2011
record_format dspace
spelling oxford-uuid:2b1afd83-9404-41c5-a3c9-04f3d6df6b022022-03-26T12:28:59ZRapid surface oxidation as a source of surface degradation factor for Bi₂Se₃.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:2b1afd83-9404-41c5-a3c9-04f3d6df6b02EnglishSymplectic Elements at Oxford2011Kong, DCha, JLai, KPeng, HAnalytis, JMeister, SChen, YZhang, HFisher, IShen, ZCui, YBismuth selenide (Bi(2)Se(3)) is a topological insulator with metallic surface states (SS) residing in a large bulk bandgap. In experiments, synthesized Bi(2)Se(3) is often heavily n-type doped due to selenium vacancies. Furthermore, it is discovered from experiments on bulk single crystals that Bi(2)Se(3) gets additional n-type doping after exposure to the atmosphere, thereby reducing the relative contribution of SS in total conductivity. In this article, transport measurements on Bi(2)Se(3) nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi(2)Se(3) under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological SS. Appropriate surface passivation or encapsulation may be required to probe topological SS of Bi(2)Se(3) by transport measurements.
spellingShingle Kong, D
Cha, J
Lai, K
Peng, H
Analytis, J
Meister, S
Chen, Y
Zhang, H
Fisher, I
Shen, Z
Cui, Y
Rapid surface oxidation as a source of surface degradation factor for Bi₂Se₃.
title Rapid surface oxidation as a source of surface degradation factor for Bi₂Se₃.
title_full Rapid surface oxidation as a source of surface degradation factor for Bi₂Se₃.
title_fullStr Rapid surface oxidation as a source of surface degradation factor for Bi₂Se₃.
title_full_unstemmed Rapid surface oxidation as a source of surface degradation factor for Bi₂Se₃.
title_short Rapid surface oxidation as a source of surface degradation factor for Bi₂Se₃.
title_sort rapid surface oxidation as a source of surface degradation factor for bi₂se₃
work_keys_str_mv AT kongd rapidsurfaceoxidationasasourceofsurfacedegradationfactorforbi2se3
AT chaj rapidsurfaceoxidationasasourceofsurfacedegradationfactorforbi2se3
AT laik rapidsurfaceoxidationasasourceofsurfacedegradationfactorforbi2se3
AT pengh rapidsurfaceoxidationasasourceofsurfacedegradationfactorforbi2se3
AT analytisj rapidsurfaceoxidationasasourceofsurfacedegradationfactorforbi2se3
AT meisters rapidsurfaceoxidationasasourceofsurfacedegradationfactorforbi2se3
AT cheny rapidsurfaceoxidationasasourceofsurfacedegradationfactorforbi2se3
AT zhangh rapidsurfaceoxidationasasourceofsurfacedegradationfactorforbi2se3
AT fisheri rapidsurfaceoxidationasasourceofsurfacedegradationfactorforbi2se3
AT shenz rapidsurfaceoxidationasasourceofsurfacedegradationfactorforbi2se3
AT cuiy rapidsurfaceoxidationasasourceofsurfacedegradationfactorforbi2se3