The role of interface quality in resonant tunneling between transverse X-states in GaAs/AlAs double barrier structures pressurised beyond the type II transition
We examine in detail the first high pressure resonance related to tunneling between the lowest transverse X-state in each AlAs layer, of GaAs/AlAs 'double barrier' structures with equal AlAs thicknesses grown by Molecular Beam Epitaxy (MBE) calibrated using Reflection High Energy Electron...
| Egile Nagusiak: | , , , , |
|---|---|
| Formatua: | Journal article |
| Hizkuntza: | English |
| Argitaratua: |
1995
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