The role of interface quality in resonant tunneling between transverse X-states in GaAs/AlAs double barrier structures pressurised beyond the type II transition

Míreanna comhchosúla

• THE ROLE OF INTERFACE QUALITY IN RESONANT-TUNNELING BETWEEN TRANSVERSE X-STATES IN GAAS/ALAS DOUBLE-BARRIER STRUCTURES PRESSURIZED BEYOND THE TYPE-II TRANSITION
  de réir: Smith, J, et al.
  Foilsithe / Cruthaithe: (1995)
• Resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under elevated hydrostatic pressure
  de réir: Smith, J, et al.
  Foilsithe / Cruthaithe: (1998)
• Resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under elevated hydrostatic pressure
  de réir: Smith, J, et al.
  Foilsithe / Cruthaithe: (1998)
• Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure
  de réir: Smith, J, et al.
  Foilsithe / Cruthaithe: (1998)
• Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure
  de réir: Smith, J, et al.
  Foilsithe / Cruthaithe: (1998)