Dislocations in semiconductors

<p>A set of codes with 3D periodic boundary conditions has been developed to model dislocations in semiconductors. Several schemes have been used to investigate the atomic structure of dislocations; classical potentials incorporated in a Molecular Dynamics framework, a tightbinding k-space sc...

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Detalles Bibliográficos
Autor Principal: Bigger, J
Outros autores: Sutton, A
Formato: Thesis
Idioma:English
Publicado: 1992
Subjects:

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